Related papers: Insulating improper ferroelectric domain walls as …
The observation of unexpected polarisation textures such as vortices, skyrmions and merons in various oxide heterostructures has challenged the widely accepted picture of ferroelectric domain walls as being Ising-like. Bloch components in…
This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $\beta$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can…
Two-dimensional (2D) ferroelectric semiconductors present opportunities for integrating ferroelectrics into high-density ultrathin nanoelectronics. Among the few synthesized 2D ferroelectrics, $\alpha$-In$_2$Se$_3$, known for its…
The Landau theory of 180 degrees domain walls in BaTiO3 type ferroelectric particles is presented. Results of exact description of domain walls in bulk enabled us to formulate variational approach to theory of domain walls in corresponding…
Ferroelectric memristors have attracted much attention as a type of nonvolatile resistance switching memories in neuromorphic computing, image recognition, and information storage. Their resistance switching mechanisms have been studied…
The large discrepancy between experimental and theoretical remanent polarization and coercive field limits the applications of wide-band-gap ferroelectric materials. Here, using a machine-learning potential trained on ab-initio molecular…
Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP$_2$S$_6$ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization…
Domain walls (DWs), the two-dimensional boundaries between symmetry equivalent ferroic domains, are actively investigated due to their promise for novel logic and memory devices. Moreover, they can be easily created, erased and reshaped at…
We have investigated the atomistic structure of the 180-degree and 90-degree domain boundaries in the ferroelectric perovskite compound PbTiO3 using a first-principles ultrasoft-pseudopotential approach. For each case we have computed the…
Charged domain walls and boundaries in ferroelectric materials display distinct phenomena, such as an increased conductivity due to the accumulation of bound charges. Here, we report the electron microscopy observations of atomic-scale…
This work presents the design of beta-Ga2O3 schottky barrier diode using high-k dielectric superjunction to significantly enhance the breakdown voltage vs on-resistance trade-off beyond its already high unipolar figure of merit. The device…
A three-dimensional topological insulator manifests gapless surface modes, described by two-dimensional Dirac equation. We study magnetic textures, such as domain walls and vortices, in a ferromagnetic thin film deposited on a…
Ferroelectric domain walls, recognized as distinct from the bulk in terms of symmetry, structure, and electronic properties, host exotic phenomena including conductive walls, ferroelectric vortices, novel topologies, and negative…
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant computing technologies. However, it remains elusive about how…
Since its original prediction 25 years ago, room-temperature out-of-plane ferroelectricity in compressively strained SrTiO3 remains an ongoing pursuit. In this work, we investigate the structural, electrical and electromechanical properties…
Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…
Charged domain walls form spontaneously in Cu-Cl boracite on cooling through the phase transition. These walls exhibit changed conductivity compared to the bulk and motion consistent with the existence of negative capacitance. Here, we…
We present a theoretical investigation of electron states hosted by magnetic domain walls on the 3D topological insulator surface. The consideration includes the domain walls with distinct vectorial and spatial textures. The study is…
Antiferroelectrics are emerging as advanced functional materials and are fertile ground for unusual electric effects. For example, they enhance the recoverable energy density in energy storage applications and give rise to large…
Although enhanced conductivity at ferroelectric domain boundaries has been found in BiFeO$_3$ films, Pb(Zr,Ti)O$_3$ films, and hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under…