Related papers: Single-Molecule Magnet Mn$_{12}$ on GaAs-supported…
The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors (DMS) can be increased by co-doping with another conventional electronic dopant (e-dopant) [Zhu et al., Phys. Rev. Lett. 100,…
We investigate a large variation in a diagonal component of the linear magnetoelectric (ME) susceptibility in a polar ferrimagnet Mn2Mo3O8 while changing the magnetic-ion site from orbital-quenched Mn2+ to Fe2+ with strong uniaxial…
This study examines the anomalous Hall effect (AHE) in the Heusler series \ce{Mn3Z} (Z=Ga, Ge, Sn), with a particular emphasis on the manipulation of non-collinear antiferromagnetic structures to enhance AHE. By employing density-functional…
Magnetic anisotropy is a key parameter to describe the exchange bias effect in heterostructures. In this paper, we describe explicit density functional calculations of the magnetic structure of an interface between the industrially…
Density functional calculations with a large unit cell have been conducted to investigate adsorption, segregation and magnetization of Mn monomer on GaAs(110). The Mn adatom is rather mobile along the trench on GaAs(110), with an energy…
Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…
Strong correlated manganites are still under intense research owing to their complex phase diagrams in terms of the Sr-doping and their sensitivity to intrinsic and extrinsic structural deformations. Here, we performed x-ray absorption…
Transition metal thriclorides, with $4d$ or $5d$ electrons, are materials at the forefront of recent studies about the interplay of spin-orbit coupling and strong Coulomb interactions. Within our first-principles calculations (DFT+$U$+SOC)…
We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…
We review different electron transport methods to probe the magnetic properties, such as the magnetic anisotropy, of an individual Fe4 SMM. The different approaches comprise first and higher order transport through the molecule. Gate…
The resistivity, magnetoresistance, and magnetic susceptibility are measured in single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe. The crystals are grown by Bridgman's method. The resistivity measurements show that…
In Fe pnictide (Pn) superconducting materials, neither Mn- nor Cr- doping to the Fe site induces superconductivity, even though hole carriers are generated. This is in strong contrast with the superconductivity appearing when holes are…
Here we report on the effect of rare earth Gd-doping on the magnetic properties and magnetotransport of GaN two-dimensional electron gasses (2DEGs). Samples are grown by plasma-assisted molecular beam epitaxy and consist of AlN/GaN…
We present a theory describing the single-ion anisotropy of rare earth (RE) magnets in the presence of point defects. Taking the RE-lean 1:12 magnet class as a prototype, we use first-principles calculations to show how the introduction of…
Some of the highest transition temperatures achieved for Mn-doped GaAs have been in delta-doped heterostructures with well-separated planes of Mn. But in the absence of magnetic anisotropy, the Mermin-Wagner theorem implies that a single…
First-principles calculations are used to gauge different levels of approximation to calculate the magnetocrystalline anisotropy energies (MAE) of five $L1_0$ FeMe alloys (Me=Co, Cu, Pd, Pt, Au). We find that a second-order perturbation…
This paper is to explore the de Haas-van Alphen effect $(dHvA)$ of graphene in the presence of an in-plane uniform electric field. Three major findings are yielded. First of all, the electric field is found to modulate the de Haas-van…
Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…
The electronic structural properties in the presence of constrained magnetization and a charged background are studied for a monolayer of FeSe in non-magnetic, checkerboard-, and striped-antiferromagnetic (AFM) spin configurations. First…
A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or even change its sign, resulting in strong modifications of…