Related papers: Nonrad: Computing Nonradiative Capture Coefficient…
We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including…
Nonradiative carrier recombination is of both great applied and fundamental importance.But the correct ab initio approaches to calculate it remains to be inconclusive. Here we used 5 different formalisms to calculate the nonradiative…
In this study, we explore an approach aimed at enhancing the transmission or reflection coefficients of absorbing materials through the utilization of joint measurements of entangled photon states. On the one hand, through the…
Inelastic scattering and carrier capture by defects in semiconductors are the primary causes of hot-electron-mediated degradation of power devices, which holds up their commercial development. At the same time, carrier capture is a major…
We introduce a method to calculate defect-assisted Shockley-Read-Hall (SRH) recombination rates in imperfect semiconductors from first principles. The method accounts for the steady state recombination dynamics under given non-equilibrium…
As a typical nonradiative multiphonon transition in semiconductors, carrier capture at defects is critical to the performance of semiconductor devices. Its transition rate is usually calculated using the equal-mode approximation, which…
Trap-assisted nonradiative recombination is known to limit the efficiency of optoelectronic devices, but the conventional multi-phonon emission (MPE) process fails to explain the observed loss in wide-band-gap materials. Here we highlight…
We present a methodology to calculate radiative carrier capture coefficients at deep defects in semiconductors and insulators from first principles. Electronic structure and lattice relaxations are accurately described with hybrid density…
Signal recovery from nonlinear measurements involves solving an iterative optimization problem. In this paper, we present a framework to optimize the sensing parameters to improve the quality of the signal recovered by the given iterative…
Carrier recombination is a process that significantly influences the performance of semiconductor devices such as solar cells, photodiodes, and light-emitting diodes (LEDs). Therefore, a model that can accurately describe and quantify the…
Nonradiative carrier recombination at semiconductor deep centers is of great importance to both fundamental physics and device engineering. In this letter, we provide a revised analysis of K. Huang's original nonradiative multi-phonon (NMP)…
Microwave reflectance probed photoconductivity (or $\mu$-PCD) measurement represents a contactless and non-invasive method to characterize impurity content in semiconductors. Major drawbacks of the method include a difficult separation of…
Platinum (Pt) is widely used for carrier-lifetime control in silicon power devices, yet the microscopic nonradiative recombination mechanism of the substitutional platinum ($\text{Pt}_\text{Si}$) dopant remains debated. Using…
In search of a reliable methodology for the prediction of light absorption and emission of Ce$^{3+}$-doped luminescent materials, 13 representative materials are studied with first-principles and semiempirical approaches. In the…
The dynamic capture of electrons in a semiconductor quantum dot (QD) by raising a potential barrier is a crucial stage in metrological quantized charge pumping. In this work, we use a quantum point contact (QPC) charge sensor to study…
In this study, we applied the PointRend (Point-based Rendering) method to semiconductor defect segmentation. PointRend is an iterative segmentation algorithm inspired by image rendering in computer graphics, a new image segmentation method…
The ABC model has been widely used to describe the carrier recombination rate, in which the rate of non-radiative recombination assisted by deep-level defects is assumed to depend linearly on excess carrier density $\Delta n$, leading to a…
We introduce Noise Recycling, a method that enhances decoding performance of channels subject to correlated noise without joint decoding. The method can be used with any combination of codes, code-rates and decoding techniques. In the…
The rapid development of optical technologies and applications revealed the critical role of point defects affecting device performance. One of the powerful tools to study influence of defects on charge capture and recombination processes…
Long Wavelenght infrared devices, despite growing interest due to a wide range of applications in commercial, public, and academic sectors, are still struggling to achieve significant improvements over well-established technologies like…