Related papers: Optical properties of silicon-implanted polycrysta…
Nitrogen-vacancy (NV) centers in diamond are optically addressable spin defects with great potential for nanoscale quantum sensing. A key application of NV centers is the detection of external spins at the diamond surface. Among metals,…
Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon vacancy centers in diamond (SiV) offer excellent physical properties…
The silicon-vacancy ($\mathrm{SiV}^-$) color center in diamond has attracted attention due to its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of…
The practical implementation of many quantum technologies relies on the development of robust and bright single photon sources that operate at room temperature. The negatively charged silicon-vacancy (SiV-) color center in diamond is a…
The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous…
Nanodiamonds (NDs) hosting optically active defects are an important technical material for applications in quantum sensing, biological imaging, and quantum optics. The negatively charged silicon vacancy (SiV) defect is known to fluoresce…
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate…
The need of near-surface color centers in diamond for quantum technologies motivates the controlled doping of specific extrinsic impurities into the crystal lattice. Recent experiments have shown that this can be achieved by momentum…
Quantum memories based on emitters with optically addressable spins rely on efficient photonic interfaces, often implemented as nanophotonic cavities with ideally narrow spectral linewidths and small mode volumes. However, these approaches…
Color centers in diamond are widely explored as qubits in quantum technologies. However, challenges remain in the effective and efficient integration of these diamond-hosted qubits in device heterostructures. Here, nanoscale-thick uniform…
Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and…
Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum…
High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing.…
Many quantum networking applications require efficient photonic interfaces to quantum memories which can be produced at scale and with high yield. Synthetic diamond offers unique potential for the implementation of this technology as it…
Integrating atomic quantum memories based on color centers in diamond with on-chip photonic devices would enable entanglement distribution over long distances. However, efforts towards integration have been challenging because color centers…
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded…
We report on the isolation of single SiV$^-$ centers in nanodiamonds. We observe the fine-structure of single SiV$^-$ center with improved inhomogeneous ensemble linewidth below the excited state splitting, stable optical transitions, good…
We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a…
Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids,…
We demonstrate a new approach for engineering group IV semiconductor-based quantum photonic structures containing negatively charged silicon-vacancy (SiV$^-$) color centers in diamond as quantum emitters. Hybrid SiC/diamond structures are…