Related papers: Picosecond Switching of Optomagnetic Tunnel Juncti…
We demonstrate a Josephson junction with a weak link containing two ferromagnets, with perpendicular magnetic anisotropy and independent switching fields in which the critical current can be set by the mutual orientation of the two layers.…
Significant scientific and technological progress in the field of spintronics is based on trilayer magnetic tunnel junction devices which principally rely on the physics of single barrier tunneling. While technologically relevant devices…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
The human brain achieves exceptional energy efficiency by co-locating memory and processing, yet reproducing this principle in hardware remains challenging because many neuromorphic devices require standby power, offer limited…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here we directly demonstrate the usefulness of this strategy by fabricating…
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high…
We report on the current-induced magnetization switching of a three-terminal perpendicular magnetic tunnel junction by spin-orbit torque and the read-out using the tunnelling magnetoresistance (TMR) effect. The device is composed of a…
Spintronics provides an efficient platform for realizing non-volatile memory and logic devices. In these systems, data is stored in the magnetization of magnetic materials, and magnetization is switched in the writing process. In…
We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, < 5 Ohm-micron-squared, barriers. The current densities required…
Replacing the ferromagnet with ferrimagnet (FiM) in the magnetic tunnel junction (MTJ) allows faster magnetization switching in picoseconds. The operation of a memory cell that consists of the MTJ and a transistor requires reversable…
For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the…
We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically…
The recently proposed probabilistic spin logic presents promising solutions to novel computing applications. Multiple cases of implementations, including invertible logic gate, have been studied numerically by simulations. Here we report an…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
Flexible electronic devices require the integration of multiple crucial components on soft substrates to achieve their functions. In particular, memory devices are the fundamental component for data storage and processing in flexible…