Related papers: Planar Hall effect caused by the memory of antifer…
Mn$_{3}$Sn is a non-collinear antiferromagnet which displays a large anomalous Hall effect at room temperature. It is believed that the principal contribution to its anomalous Hall conductivity comes from Berry curvature. Moreover, dc…
The Planar Hall effect (PHE) in topological materials has been a subject of great interest in recent years. Generally, it is understood to originate from the chiral-anomaly (CA) induced charge pumping between doubly degenerate Weyl nodes.…
The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus…
We uncover a strong anisotropy in both the anomalous Hall effect (AHE) and the magnetoresistance of the chiral spin states of Pr$_2$Ir$_2$O$_7$. The AHE appearing below 1.5 K at zero magnetic field shows hysteresis which is most pronounced…
Anomalous Hall effect (AHE), occurring in materials with broken time-reversal symmetry, epitomizes the intricate interplay between magnetic order and orbital motions of electrons[1-4]. In two dimensional (2D) systems, AHE is always coupled…
Topological Hall effect (THE), a quantum phenomenon arising from emergent magnetic field generated by topological spin texture, is a key method for detecting non-coplanar spin structures like skyrmions in magnetic materials. Here, we…
Much excitement has been generated recently by the experimental observation of the chiral anomaly in condensed matter physics. This manifests as strong negative longitudinal magnetoresistance and has so far been clearly observed in…
We report the anomalous Hall effect (AHE) in antiperovskite Mn$_{3}$NiN with substantial doping of Cu on the Ni site (i.e. Mn$_{3}$Ni$_{1-x}$Cu$_{x}$N), which stabilizes a noncollinear antiferromagnetic (AFM) order compatible with the AHE.…
We report an investigation of temperature and IrMn layered thickness dependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance (AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG) heterostructures. The magnitude…
Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in…
Evidence of both fractional and integer quantum hall effects (QHE) in three dimensional bulk replica opal (250nm diameter) structures of non-crystalline carbon are presented. In a remarkably soft quantum limit of ~ 40K temperature and about…
The anomalous Hall effect (AHE) is an efficient tool for detecting the N\'eel vector in collinear compensated magnets with spin-split bands, known as altermagnets (AMs). Here, we establish design principles for obtaining non-zero anomalous…
Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric current and magnetic field, an exotic phenomenon called…
Me$_{3+\delta}$Ge, being a Weyl semimetal, shows a large anomalous Hall effect (AHE), which decreases slowly with an increase in $\delta$ from 0.1 to 0.4. However, AHE in this compound remains significantly large in the whole range of…
Extraordinary Hall effect (EHE) is a spin-dependent phenomenon that generates voltage proportional to magnetization across a current carrying magnetic film. Magnitude of the effect can be artificially increased by stimulating properly…
The recent discoveries of surperisingly large anomalous Hall effect in chiral antiderromagnets have triggered extensive research efforts in various fields, ranging from topological condensed-matter physics to antiferromagnetic spintronics,…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
The electrical Hall effect can be significantly enhanced through the interplay of the conduction electrons with magnetism, which is known as the anomalous Hall effect (AHE). Whereas the mechanism related to band topology has been…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick…
Nonlinear Hall effect (NHE) can originate from the quantum metric mechanism in antiferromagnetic topological materials with PT symmetry, which has been experimentally observed in MnBi2Te4. In this work, we propose that breaking PT symmetry…