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Non-volatile memory (NVM), also known as persistent memory, is an emerging paradigm for memory that preserves its contents even after power loss. NVM is widely expected to become ubiquitous, and hardware architectures are already providing…
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…
Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHammer and RowPress are two examples of read disturbance in…
We describe verification techniques for embedded memory systems using efficient memory modeling (EMM), without explicitly modeling each memory bit. We extend our previously proposed approach of EMM in Bounded Model Checking (BMC) for a…
DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…
Modern computing systems are embracing hybrid memory comprising of DRAM and non-volatile memory (NVM) to combine the best properties of both memory technologies, achieving low latency, high reliability, and high density. A prominent…
High density Solid State Drives, such as QLC drives, offer increased storage capacity, but a magnitude lower Program and Erase (P/E) cycles, limiting their endurance and hence usability. We present the design and implementation of…
Phase-change memory (PCM) devices have multiple banks to serve memory requests in parallel. Unfortunately, if two requests go to the same bank, they have to be served one after another, leading to lower system performance. We observe that a…
We present a method to improve the convergence of variational algorithms based on hidden inverses to mitigate coherent errors. In the context of error mitigation, this means replacing the on hardware implementation of certain Hermitian…
This paper obtains fundamental limits on the computational precision of in-memory computing architectures (IMCs). An IMC noise model and associated SNR metrics are defined and their interrelationships analyzed to show that the accuracy of…
This paper summarizes the ideas and key concepts in MISE (Memory Interference-induced Slowdown Estimation), which was published in HPCA 2013 [97], and examines the work's significance and future potential. Applications running concurrently…
With the emergence of Non-Volatile Memories (NVMs) and their shortcomings such as limited endurance and high power consumption in write requests, several studies have suggested hybrid memory architecture employing both Dynamic Random Access…
NAND flash memory is ubiquitous in everyday life today because its capacity has continuously increased and cost has continuously decreased over decades. This positive growth is a result of two key trends: (1) effective process technology…
Self-modifying code (SMC) allows programs to alter their own instructions, optimizing performance and functionality on x86 processors. Despite its benefits, SMC introduces unique microarchitectural behaviors that can be exploited for…
Non-volatile memory (NVM) technologies such as PCM, ReRAM and STT-RAM allow processors to directly write values to persistent storage at speeds that are significantly faster than previous durable media such as hard drives or SSDs. Many…
Byte-addressable non-volatile memory (NVM) features high density, DRAM comparable performance, and persistence. These characteristics position NVM as a promising new tier in the memory hierarchy. Nevertheless, NVM has asymmetric read and…
Modern embedded systems are evolving toward complex, heterogeneous architectures to accommodate increasingly demanding applications. Driven by SWAP-C constraints, this shift has led to consolidating multiple systems onto single hardware…
Today, there are a plethora of In-Memory Computing (IMC) devices- SRAMs, PCMs & FeFETs, that emulate convolutions on crossbar-arrays with high throughput. Each IMC device offers its own pros & cons during inference of Deep Neural Networks…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…