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Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…
Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…
DRAM-based main memory and its associated components increasingly account for a significant portion of application performance bottlenecks and power budget demands inside the computing ecosystem. To alleviate the problems of storage density…
Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
In recent years, due to the spread of multi-level non-volatile memories (NVM), $q$-ary write-once memories (WOM) codes have been extensively studied. By using WOM codes, it is possible to rewrite NVMs $t$ times before erasing the cells. The…
The rapid development of multi-core system and increase of data-intensive application in recent years call for larger main memory. Traditional DRAM memory can increase its capacity by reducing the feature size of storage cell. Now further…
In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced…
Resistive memories have limited lifetime caused by limited write endurance and highly non-uniform write access patterns. Two main techniques to mitigate endurance-related memory failures are 1) wear-leveling, to evenly distribute the writes…
Compute-in-memory (CiM) architectures promise significant improvements in energy efficiency and throughput for deep neural network acceleration by alleviating the von Neumann bottleneck. However, their reliance on emerging non-volatile…
Persistent Memory (PM) makes possible recoverable applications that can preserve application progress across system reboots and power failures. Actual recoverability requires careful ordering of cacheline flushes, currently done in two…
Intel OptaneTM DC Persistent Memory resides on the memory bus and approaches DRAM in access latency. One avenue for its adoption is to employ it in place of persistent storage; another is to use it as a cheaper and denser extension of DRAM.…
Memory consistency model (MCM) issues in out-of-order-issue microprocessor-based shared-memory systems are notoriously non-intuitive and a source of hardware design bugs. Prior hardware verification work is limited to in-order-issue…
Increasing storage density exacerbates DRAM read disturbance, a circuit-level vulnerability exploited by system-level attacks. Unfortunately, existing defenses are either ineffective or prohibitively expensive. Efficient mitigation is…
With the imminent slowing down of DRAM scaling, Phase Change Memory (PCM) is emerging as a lead alternative for main memory technology. While PCM achieves low energy due to various technology-specific advantages, PCM is significantly slower…
Massive off-chip accesses in GPUs are the main performance bottleneck, and we divided these accesses into three types: (1) Write, (2) Data-Read, and (3) Read-Only. Besides, We find that many writes are duplicate, and the duplication can be…
The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…
As deep neural network (DNN) models are growing exponentially in size, their deployment on resource-constrained edge platforms is becoming increasingly challenging. In-memory-computing (IMC) with non-volatile memories (NVMs) has emerged as…
Efficient low complexity error correcting code(ECC) is considered as an effective technique for mitigation of multi-bit upset (MBU) in the configuration memory(CM)of static random access memory (SRAM) based Field Programmable Gate Array…
Phase change memory (PCM) has recently emerged as a promising technology to meet the fast growing demand for large capacity memory in computer systems, replacing DRAM that is impeded by physical limitations. Multi-level cell (MLC) PCM…