Related papers: Tunable interdot coupling in few-electron bilayer …
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
Superconducting protected qubits aim to achieve sufficiently low error rates so as to allow realization of error-corrected, utility-scale quantum computers. A recent proposal encodes a protected qubit in the quasicharge degree of freedom of…
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the…
Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning…
We analyze the phase diagram of multilayer-graphene sandwiched between identical transition metal dichalcogenides. Recently realized in all van-der-Wall heterostructures, these sandwiches induce sizable (1-15 meV) spin orbit coupling in the…
We study numerically cross conductances in a four-terminal all-graphene setup. We show that far away from the Dirac point current flows along zigzag directions, giving the possibility to guide the current between terminals using a tunable…
The efficient control of a large number of qubits is one of most challenging aspects for practical quantum computing. Current approaches in solid-state quantum technology are based on brute-force methods, where each and every qubit requires…
We present transport measurements on a lateral double dot produced by combining local anodic oxidation and electron beam lithography. We investigate the tunability of our device and demonstrate, that we can switch between capacitive and…
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit…
The rich and electrostatically tunable phase diagram exhibited by moir\'e materials has made them a suitable platform for hosting single material multi-purpose devices. To engineer such devices, understanding electronic transport and…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array…
The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-scale hut wire positioning. These properties make the Ge hut…
The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the…
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated…
We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate…
Recent measurements have shown that a continuously tunable bandgap of up to 250 meV can be generated in biased bilayer graphene [Y. Zhang et al., Nature 459, 820 (2009)], opening up pathway for possible graphene-based nanoelectronic and…
This thesis studies how the rudimentary attributes of graphene's charge carriers, and local moments on its surface, can be directly manipulated and controlled with electrostatic potentials. We first consider bilayer graphene subject to a…
We determine the optical properties of gated bilayer graphene quantum dots with trigonal warping (TW) of single-particle energy spectra. The lateral structure of metallic gates confines electrons and holes in a quantum dot (QD)…
Controllable interaction between superconducting qubits is desirable for large-scale quantum computation and simulation. Here, based on a theoretical proposal by Yan et al. [Phys. Rev. Appl. 10, 054061 (2018)] we experimentally demonstrate…