Related papers: Isotropic and Anisotropic g-factor Corrections in …
We perform tilt-field transport experiment on inverted InAs/GaSb which hosts quantum spin Hall insulator. By means of coincidence method, Landau level (LL) spectra of electron and hole carriers are systematically studied at different…
Non-charge based logic in single-hole spin of semiconductor quantum dots (QDs) can be controlled by anisotropic gate potentials providing a notion for making next generation solid-state quantum devices. In this study, we investigate the…
We report measurements of the effective $g$ factor of low-density two-dimensional holes in a Ge quantum well. Using the temperature dependence of the Shubnikov-de Haas oscillations, we extract the effective $g$ factor in a magnetic field…
Two-loop self-energy corrections to the bound-electron $g$ factor are investigated theoretically to all orders in the nuclear binding strength parameter $Z\alpha$. The separation of divergences is performed by dimensional regularization,…
We investigate the effects of the orientation of the magnetic field and the orientation of a quantum dot, with respect to crystallographic coordinates, on the quality of an electrically controlled qubit realized in a gated semiconductor…
The dependence of mesoscopic conductance fluctuations on parallel magnetic field is used as a probe of spin degeneracy in open GaAs quantum dots. The variance of fluctuations at high parallel field is reduced from the low-field variance…
Hole-spin qubits in planar Ge/SiGe heterostructures have attracted significant attention in recent years owing to their favorable electrical characteristics and prolonged coherence times. However, the strong spin-orbit interaction also…
We show that the electron and hole Lande g factors in self-assembled III-V quantum dots have a rich structure intermediate between that expected for paramagnetic atomic impurities and for bulk semiconductors. Strain, dot geometry, and…
The effective g-factor ($g^{*}$) of a dilute interacting two-dimensional electron system is expected to increase with respect to its bare value as the density is lowered, and to eventually diverge as the system makes a transition to a…
We theoretically consider g factor and spin lifetimes of holes in a longitudinal Ge/Si core/shell nanowire quantum dot that is exposed to external magnetic and electric fields. For the ground states, we find a large anisotropy of the g…
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a…
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from…
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly…
Hybrid semiconductor-superconductor quantum dot devices are tunable physical realizations of quantum impurity models for a magnetic impurity in a superconducting host. The binding energy of the localized sub-gap Shiba states is set by the…
A critical set of two-loop QED corrections to the $g$ factor of hydrogenlike ions is calculated without expansion in the nuclear binding field. These corrections are due to the polarization of the external magnetic field by the quantum…
We review the existing and present the new results of $\bf kp$ calculations of the electron, hole, and exciton effective $g$-factors in semiconductor nanocrystals of different shape and symmetry. We propose a simple yet accurate method for…
We present calculations of the g factors for the lower conductance steps of 3D hole quantum wires. Our results prove that the anisotropy with magnetic field orientation, relative to the wire, originates in the Rashba spin-orbit coupling. We…
The origin of the g-factor of the two-dimensional (2D) electrons and holes moving in the periodic crystal lattice potential with the perpendicular magnetic and electric fields is discussed. The Pauli equation describing the Landau…
This work reports the measurement of electron $g$ factor anisotropy ($| \Delta g |$ = $| g_{001} - g_{1 \bar 1 0} |$) for phosphorous donor qubits in strained silicon (sSi = Si/Si$_{1-x}$Ge$_x$) environments. Multi-million-atom…
The critical filling factor v_c where Shubnikov-de Haas oscillations become spin split is investigated for a set of GaAs-GaAlAs heterojunctions. Finite temperature magnetoresistance measurements are used to extract the value of v_c at zero…