Related papers: Spin torque gate magnetic field sensor
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
This paper presents a novel six-axis force/torque (F/T) sensor based on inductive sensing technology. Unlike conventional strain gauge-based sensors that require direct contact and external amplification, the proposed sensor utilizes…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…
Two promising strategies for achieving efficient control of magnetization in future magnetic memory and non-volatile spin logic devices are spin transfer torque from spin polarized currents and voltage-controlled magnetic anisotropy (VCMA).…
The field of magnonics, which utilizes propagating spin waves for nano-scale transmission and processing of information, has been significantly advanced by the advent of the spin-orbit torque. The latter phenomenon can allow one to overcome…
Spin-orbit torque (SOT)-induced magnetization switching shows promise for realizing ultrafast and reliable spintronics devices. Bipolar switching of perpendicular magnetization via SOT is achieved under an in-plane magnetic field collinear…
We consider a biaxial macrospin with an easy and hard axis, and study its dynamical evolution under the combined effects of thermal noise and spin transfer torque. The spin-torque is associated with both a perpendicularly magnetized…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
In this paper, we propose a Spin-Torque (ST) based sensing scheme that can enable energy efficient multi-bit long distance interconnect architectures. Current-mode interconnects have recently been proposed to overcome the performance…
The miniaturisation of magnetic read heads and random access memory elements makes them vulnerable to thermal fluctuations. We demonstrate how current-induced spin-transfer torques can be used to suppress the effects of thermal…
Owing to the unique features of low Gilbert damping, long spin-diffusion lengths and zero Ohmic losses, magnetic insulators are promising candidate materials for next-generation spintronic applications. However, due to the localized…
We formulate and quantify the spin-orbit torque (SOT) in intrinsic antiferromagnetic topological insulator $\rm MnBi_2Te_4$ of a few septuple-layer thick, which exhibits conspicuous layer-resolved characteristics. Contrary to known…
Controlling magnetism through non-magnetic means is highly desirable for future electronic devices, as such means typically have ultra-low power requirements and can provide coherent control. In recent years, great experimental progress has…
Electrical control and detection of spin precession are experimentally demonstrated by using spin-resolved edge states in the integer quantum Hall regime. Spin precession is triggered at a corner of a biased metal gate, where electron…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
We report field- and current-induced domain wall (DW) depinning experiments in Ta/Co20Fe60B20/MgO nanowires through a Hall cross geometry. While purely field-induced depinning shows no angular dependence on in-plane fields, the effect of…
Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…
Reliable and energy efficient magnetization switching by electrically-induced spin-orbit torques is of crucial technological relevance for spintronic devices implementing memory and logic functionality. Here we predict that the strength of…
Spin-orbit torque (SOT) induced magnetisation switching in CoFeB/Ta/CoFeB trilayer with two CoFeB layers exhibiting in-plane magnetic anisotropy (IPMA) and perpendicular magnetic anisotropy (PMA) is investigated. Interlayer exchange…