Related papers: Noise performance & thermalization of single elect…
Superfluidity, liquid flow without friction, is familiar in helium. The first evidence for "supersolidity", its analogue in quantum solids, came from recent torsional oscillator (TO) measurements involving 4-He. At temperatures below 200…
Quantum devices are affected by intrinsic and environmental noises. An in-depth characterization of noise effects is essential for exploiting noisy quantum computing. To this end, we studied the energy dissipative behavior of a quantum…
To search for dark matter candidates with masses below $\mathcal{O}$(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic…
We report a direct measurement of the low-frequency noise spectrum in a superconducting flux qubit. Our method uses the noise sensitivity of a free-induction Ramsey interference experiment, comprising free evolution in the presence of noise…
We report an experimental observation of the backaction of a Single Electron Transistor (SET) measuring the Coulomb staircase of a single electron box. As current flows through the SET, the charge state of the SET island fluctuates. These…
A promising technology concept for sub-GeV dark matter detection is described, in which low-temperature microcalorimeters serve as the sensors and superfluid $^4$He serves as the target material. A superfluid helium target has several…
We explore phonon-mediated quantum transport through electronic noise characterization of a commercial CMOS transistor. The device behaves as a single electron transistor thanks to a single impurity atom in the channel. A low noise…
Accurate measurement of transistor parasitic capacitance and its associated energy losses is critical for evaluating device performance, particularly in high-frequency and high-efficiency power conversion systems. This paper proposes a…
Motivated by the recent development of fast and ultra-sensitive thermometry in nanoscale systems, we investigate quantum calorimetric detection of individual heat pulses in the sub-meV energy range. We propose a hybrid superconducting…
Electrons floating on the surface of liquid helium are possible qubits for quantum information processing. Varying electric potentials do not modify spin states, which allows their transport on helium using a charge-coupled device…
We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths…
The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit…
Radiation sensors based on the heating effect of the absorbed radiation are typically relatively simple to operate and flexible in terms of the input frequency. Consequently, they are widely applied, for example, in gas detection, security,…
Self-heating in next-generation, high-power-density field-effect transistor limits performance and complicates fabrication. Here, we introduce NEP-FET, a machine-learned framework for device-scale heat transport simulations of field-effect…
We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in…
Electron spins in silicon quantum dots are excellent qubits due to their long coherence times, scalability, and compatibility with advanced semiconductor technology. Although high gate fidelities can be achieved with spin qubits, charge…
We measure the defect density as a function of time at different temperatures in simulations of a two dimensional system of interacting particles. Just above the solid to liquid transition temperature, the power spectrum of the defect…
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe$_{3}$ crystal with a charge density wave (CDW). The…
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve…
Single-electron transistors (SETs) have been extensively used as charge sensors in many areas such as quantum computations. In general, the signals of SETs are smaller than those of complementary metal-oxide semiconductor (CMOS) devices,…