Related papers: Tunnel field-effect transistors for sensitive tera…
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of…
High performance Terahertz (THz) photodetector has drawn wide attention and got great improvement due to its significant application in biomedical, astrophysics, nondestructive inspection, 6th generation communication system as well as…
Lightwave-driven terahertz scanning tunnelling microscopy (THz-STM) is capable of exploring ultrafast dynamics across a wide range of materials with angstrom resolution. In contrast to scanning near-field optical microscopy, where photons…
ABA-stacked trilayer graphene (TLG), the simplest system consisting of both massless and massive Dirac fermions, is expected to exhibit many interesting broken-symmetry quantum Hall states and interaction-induced phenomena. However,…
Superlattice potentials are theoretically predicted to modify the single-particle electronic structures. The resulting Coulomb-interaction-dominated low-energy physics would generate highly novel many-body phenomena. Here, by in situ…
The effect of a parallel magnetic field $B$ and a potential substrate on the transmission, conductivity, and Fano factor of a biased ABC-stacked $pn$ and $pnp$ trilayer graphene junction (ABC-TLG) is investigated theoretically at low…
Controlling the bandstructure of Dirac materials is of wide interest in current research but has remained an outstanding challenge for systems such as monolayer graphene. In contrast, Bernal bilayer graphene (BLG) offers a highly flexible…
The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here we show an alternative method to control the electronic properties of…
Thermoelectric readout in a graphene THz radiation detector requires a p-n junction across the graphene channel. Even without an intentional p-n junction, two latent junctions can exist in the vicinity of the electrodes/antennas through the…
A density-matrix formalism within the length gauge is developed for the purpose of calculating the nonlinear response of intrinsic bilayer graphene at terahertz frequencies. Employing a tight-binding model, we find that interplay between…
Active control of heat flow is of both fundamental and applied interest in thermal management and energy conversion. Here, we present a fluctuational electrodynamic study of thermal radiation between twisted bilayer graphene (TBLG),…
Within the two antenna model, we develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect arises because of the mixing of the ac signals produced in the channel by the two antennas.…
When high-frequency radiation is incident upon graphene subjected to a perpendicular magnetic field, graphene absorbs incident photons by allowing transitions between nearest LLs that follow strict selection rules dictated by angular…
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect…
Recent intense electrical and optical studies of graphene have pushed the material to the forefront of optoelectronic research. Of particular interest is the few terahertz (THz) frequency regime where efficient light sources and highly…
We propose a method for broadband long-wavelength photodetection using the nonlinear Hall effect in non-centrosymmetric quantum materials. The inherently quadratic relation between transverse current and input voltage at zero magnetic field…
Observations of terahertz loss to gain switching in transmission through gates on biased graphene sandwiches are explained by response under electron streaming in graphene. Basing on this consideration the terahertz source is proposed…
Twisted bilayer graphene has recently attracted a lot of attention for its rich electronic properties and tunability. Here we show that for very small twist angles, $\alpha \ll 1^\circ$, the application of a perpendicular electric field is…
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This…