Related papers: WoLFRaM: Enhancing Wear-Leveling and Fault Toleran…

\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…

As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…

Several emerging technologies for byte-addressable non-volatile memory (NVM) have been considered to replace DRAM as the main memory in computer systems during the last years. The disadvantage of a lower write endurance, compared to DRAM,…

In order to meet the needs of high performance computing (HPC) in terms of large memory, high throughput and energy savings, the non-volatile memory (NVM) has been widely studied due to its salient features of high density, near-zero…

Due to increasing cache sizes and large leakage consumption of SRAM device, conventional SRAM caches contribute significantly to the processor power consumption. Recently researchers have used non-volatile memory devices to design caches,…

As dynamic random access memory (DRAM) and other current transistor-based memories approach their scalability limits, the search for alternative storage methods becomes increasingly urgent. Phase-change memory (PCM) emerges as a promising…

Phase Change Memory (PCM) has rapidly progressed and surpassed Dynamic Random-Access Memory (DRAM) in terms of scalability and standby energy efficiency. Altering a PCM cell's state during writes demands substantial energy, posing a…

Non-Volatile Memories (NVMs) such as Resistive RAM (RRAM) are used in neuromorphic systems to implement high-density and low-power analog synaptic weights. Unfortunately, an RRAM cell can switch its state after reading its content a certain…

Frequent-pattern mining is a common approach to reveal the valuable hidden trends behind data. However, existing frequent-pattern mining algorithms are designed for DRAM, instead of persistent memories (PMs), which can lead to severe…

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Physical Unclonable Functions (PUFs) based on Non-Volatile Memory (NVM) technology have emerged as a promising solution for secure authentication and cryptographic applications. By leveraging the multi-level cell (MLC) characteristic of…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

Remote Memory Access (RMA) is an emerging mechanism for programming high-performance computers and datacenters. However, little work exists on resilience schemes for RMA-based applications and systems. In this paper we analyze fault…

Increased process variability and reliability issues present a major challenge for future SRAM trends. Non-intrusive and accurate SRAM stability measurement is crucial for estimating yield in large SRAM arrays. Conventional SRAM variability…

Continual learning focuses on learning non-stationary data distribution without forgetting previous knowledge. Rehearsal-based approaches are commonly used to combat catastrophic forgetting. However, these approaches suffer from a problem…

Non-Volatile Memory (NVM) cells are used in neuromorphic hardware to store model parameters, which are programmed as resistance states. NVMs suffer from the read disturb issue, where the programmed resistance state drifts upon repeated…

We introduce \emph{Adaptive RAG Memory} (ARM), a retrieval-augmented generation (RAG) framework that replaces a static vector index with a \emph{dynamic} memory substrate governed by selective remembrance and decay. Frequently retrieved…

Recent research demonstrated the promise of using resistive random access memory (ReRAM) as an emerging technology to perform inherently parallel analog domain in-situ matrix-vector multiplication -- the intensive and key computation in…

In this paper, we first show that increases in beam size, even for small-sized LLMs (1B-7B params), require extensive GPU usage, leading to up to 80% of recurring crashes due to memory overloads in LLM-based APR. Seemingly simple solutions…