Related papers: System measurement of Intel AEP Optane DIMM

Processing-in-memory (PIM) is a promising computing paradigm to tackle the "memory wall" challenge. However, PIM system-level benefits over traditional von Neumann architecture can be reduced when the memory array cannot fully store all the…

Over the past two decades, the storage capacity and access bandwidth of main memory have improved tremendously, by 128x and 20x, respectively. These improvements are mainly due to the continuous technology scaling of DRAM (dynamic…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Magneto-Electric FET (MEFET) is a recently developed post-CMOS FET, which offers intriguing characteristics for high speed and low-power design in both logic and memory applications. In this paper, for the first time, we propose a…

At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…

Byte-addressable persistent memory (B-APM) presents a new opportunity to bridge the performance gap between main memory and storage. In this paper, we present the usage scenarios for this new technology, based on the capabilities of Intel's…

The Intel Optane DC Persistent Memory (DCPM) is an attractive novel technology for building storage systems for data intensive HPC applications, as it provides lower cost per byte, low standby power and larger capacities than DRAM, with…

As the High Performance Computing world moves towards the Exa-Scale era, huge amounts of data should be analyzed, manipulated and stored. In the traditional storage/memory hierarchy, each compute node retains its data objects in its local…

Non-volatile memory (NVM) is a promising technology for low-energy and high-capacity main memory of computers. The characteristics of NVM devices, however, tend to be fundamentally different from those of DRAM (i.e., the memory device…

This paper summarizes the idea of Adaptive-Latency DRAM (AL-DRAM), which was published in HPCA 2015. The key goal of AL-DRAM is to exploit the extra margin that is built into the DRAM timing parameters to reduce DRAM latency. The key…

The emergence of high-density byte-addressable non-volatile memory (NVM) is promising to accelerate data- and compute-intensive applications. Current NVM technologies have lower performance than DRAM and, thus, are often paired with DRAM in…

The emergence of Phase-Change Memory (PCM) provides opportunities for directly connecting persistent memory to main memory bus. While PCM achieves high read throughput and low standby power, the critical concerns are its poor write…

Phase-change memory (PCM) is a scalable and low latency non-volatile memory (NVM) technology that has been proposed to serve as storage class memory (SCM), providing low access latency similar to DRAM and often approaching or exceeding the…

With the widespread use of deep neural networks(DNNs) in intelligent systems, DNN accelerators with high performance and energy efficiency are greatly demanded. As one of the feasible processing-in-memory(PIM) architectures,…

Intel OptaneTM DC Persistent Memory resides on the memory bus and approaches DRAM in access latency. One avenue for its adoption is to employ it in place of persistent storage; another is to use it as a cheaper and denser extension of DRAM.…

With the staggering increase of edge compute applications like Internet-of-Things (IoT) and artificial intelligence (AI), the demand for fast, energy-efficient on-chip memory is growing. While the fast and mature static random-access memory…

As data-intensive applications increasingly strain conventional computing systems, processing-in-memory (PIM) has emerged as a promising paradigm to alleviate the memory wall by minimizing data transfer between memory and processing units.…

Many modern workloads such as neural network inference and graph processing are fundamentally memory-bound. For such workloads, data movement between memory and CPU cores imposes a significant overhead in terms of both latency and energy. A…

Non-volatile memory (NVM) provides a scalable and power-efficient solution to replace DRAM as main memory. However, because of relatively high latency and low bandwidth of NVM, NVM is often paired with DRAM to build a heterogeneous memory…

I/O latency and throughput is one of the major performance bottlenecks for disk-based database systems. Upcoming persistent memory (PMem) technologies, like Intel's Optane DC Persistent Memory Modules, promise to bridge the gap between…