Related papers: Spin transfer torque in Mn$_3$Ga-based ferrimagnet…
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying the thickness combination of amorphous MgO and MgAl2O4…
In this work, a theoretical study of spin transport in a pseudovalve spin (PSV) heterostructure is conducted. For the semiconductor (SC), the conduction band at the $\Gamma$ point of reciprocal space and spin-orbit coupling (SOC) are…
In our JunPy package, we have combined the first-principles calculated self-consistent Hamiltonian with divide-and-conquer technique to successfully determine the magnetic anisotropy (MA) in an Fe/MgO/Fe magnetic tunnel junction (MTJ). We…
We demonstrate field and current controlled magnetodynamics in nanocontact spin-torque nano-oscillators (STNOs) based on orthogonal magnetic tunnel junctions (MTJs). We systematically analyze the microwave properties (frequency $f$,…
We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite…
We present an {\it ab-initio} study of the spin-transfer torque in a Fe/MgO/FePt/Fe magnetic tunnel junctions. We consider a FePt film with a thickness up to six unit cells, either in direct contact with the MgO spacer or with an…
Magnetic tunnel junctions (MTJs), that consist of two ferromagnetic electrodes separated by an insulating barrier layer, have non-trivial fundamental properties associated with spin-dependent tunneling. Especially interesting are fully…
We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Antiferromagnetic tunnel junctions (AFMTJs) can exhibit large tunneling magnetoresistance (TMR), making them promising candidates for ultrafast and field-robust spintronic devices. Here, we elucidate the role of band symmetry in governing…
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…
The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
We present a Non-Equilibrium Green's Function based model for spin torque transfer (STT) devices which provides quantitative agreement with experimentally measured (1) differential resistances, (2) Magnetoresistance (MR), (3) In-plane…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
We propose the perspective of symmetry-selective resonance of the $\Delta_1$ states in the Fe/MgO/ZnO/MgO/Fe heterostructures, offering a broad landscape to design magnetic tunnel junctions (MTJs) that yield a towering tunnel…
Experiments observing spin density and spin currents (responsible for, e.g., spin-transfer torque) in spintronic devices measure only the nonequilibrium contributions to these quantities, typically driven by injecting unpolarized charge…
Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van der Waals heterostructures with sharp and clean interfaces at the atomic scale are crucial for applications in nanoscale multi-resistive logic memory devices. The…
A microscopic calculation is presented for the spin-transfer torques (STT) and damping torques in metallic antiferromagnets (AF). It is found that the sign of the STT is opposite to that in ferromagnets because of the AF transport…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…