Related papers: Carrier diffusion in GaN -- a cathodoluminescence …
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional…
We present a lattice QCD calculation of the charge diffusion coefficient, the electrical conductivity and various susceptibilities of conserved charges, for a range of temperatures below and above the deconfinement crossover. The…
The conductivity spectra of c-axis oriented thin RuSr$_2$GdCu$_2$O$_8$ film on SrTiO$_3$ substrate, prepared by pulsed-laser deposition, are obtained from the analysis of the reflectivity spectra over broad frequency range and temperatures…
Buffer leakage is an important parasitic loss mechanism in AlGaN/GaN HEMTs and hence various methods are employed to grow semi-insulating buffer layers. Quantification of carrier concentration in such buffers using conventional capacitance…
The carrier emission efficiency of light emitting diodes is of fundamental importance for many technological applications, including the performance of GaN and other semiconductor photocathodes. We have measured the evolution of the emitted…
We study the spatial distribution of minority carriers arising from their anomalous photon-assisted diffusion upon photo-excitation at an edge of n-InP slab for temperatures ranging from 300 K to 78 K. The experiment provides a realization…
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a…
We consider hot carrier inelastic scattering due to electron--electron interactions in graphene, as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped…
The transient evolution of carriers in an intrinsic graphene under ultrafast excitation, which is caused by the collisionless interband transitions, is studied theoretically. The energy relaxation due to the quasielastic acoustic phonon…
Heat flow in nanomaterials is an important area of study, with both fundamental and technological implications. However, little is known about heat flow in two-dimensional (2D) devices or interconnects with dimensions comparable to the…
We review the theory of measuring spectral lines in emission/absorption observations and apply it to a new survey of the 21-cm line against 79 continuum sources. We develop an observing technique and least-squares procedure to determine the…
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese…
We show that the free carrier absorption in Quantum Cascade Lasers is very small and radically different from the classical Drude result on account of the orthogonality between the direction of the carrier free motion and the electric field…
We report the carrier dynamics and recombination coefficients in single-quantum-well semipolar $(20\bar 2\bar 1)$ InGaN/GaN light-emitting diodes emitting at 440 nm with 93% peak internal quantum efficiency. The differential carrier…
We report ultrafast surface pump and interface probe experiments on photoexcited carrier transport across single crystal bismuth films on sapphire. The film thickness is sufficient to separate carrier dynamics from lattice heating and…
Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semi-transparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser.…
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas oscillations and weak localization. The hot-electron energy loss rate is found to…
Warm absorbers are found in many AGN and consist of clouds moving at moderate radial velocities, showing complex ionization structures and having moderate to large column densities. Using 1D numerical calculations, we confirm earlier…
Minority carrier diffusion lengths in low-doped n-InGaAs using InP/InGaAs double-heterostructures are reported using a simple electrical technique. The contributions from heavy and light holes are also extracted using this methodology,…
Understanding the interplay between illumination and the electron distribution in metallic nanostructures is a crucial step towards developing applications such as plasmonic photo-catalysis for green fuels, nano-scale photo-detection and…