Related papers: Polychromatic angle resolved IBIC analysis of sili…
Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$\Omega$cm are presented. Measurements were made before and after…
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the $p$-$n$ junction…
The possibilities for inclusive diffraction in the Electron Ion Collider, EIC, in the US, are analyzed. We find that thanks to the excellent forward proton tagging, the EIC will be able to access a wider kinematical range of longitudinal…
We report theory for time-resolved spectator resonant Interparticle Coulombic Decay (ICD) processes. Following excitation by a short extreme ultraviolet pulse, the spectrum of the resonant ICD electron develops. Strong-field ionization is…
We use a string of confined $^{40}$Ca$^+$ ions to measure perturbations to a trapping potential which are caused by light-induced charging of an anti-reflection coated window and of insulating patches on the ion-trap electrodes. The…
Charge multiplication (CM) in p$^+$n epitaxial silicon pad diodes of 75, 100 and 150 $\upmu$m thickness at high voltages after proton irradiation with 1 MeV neutron equivalent fluences in the order of $10^{16}$ cm$^{-2}$ was studied as an…
The ion beam induced charge technique with proton microprobe is used to characterise newly developed p-n junction large area silicon carbide detectors. They were recently produced as part of the ongoing program to develop a new particle…
We present new measurements of CIB anisotropies using Planck. Combining HFI data with IRAS, the angular auto- and cross frequency power spectrum is measured from 143 to 3000 GHz, and the auto-bispectrum from 217 to 545 GHz. The total areas…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
Ionic liquids have attracted a lot of research attention for their applications in novel optoelectronic structures and devices as an optical means of regulating electricity. Although the electro-optic effect of ionic liquids is mentioned in…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored…
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states…
One of the possible ways to maintain the micrometer spatial resolution while performing ion beam analysis in the air is to increase the energy of ions. In order to explore capabilities and limitations of this approach, we have tested a…
The influence of the chain degree of ionization on the adsorption of weak polyelectrolytes on neutral and on oppositely and likely charged surfaces is investigated for the first time, by means of Monte Carlo simulations with the mesoscopic…
A method for determination of the bimolecular recombination constant in working double-injection diodes such as organic light-emitting diodes (OLEDs) and organic photovoltaics (OPVs) using impedance spectroscopy is proposed. The proposed…
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete…
We have investigated the depletion voltage changes, the leakage current increase and the charge collection efficiency of a silicon microstrip detector identical to those used in the inner layers of the BaBar Silicon Vertex Tracker (SVT)…
We present an innovative charge detector with high resolution and wide dynamic range designed to fulfill the requirements of a monitoring system for a high energy ion beam. The detector prototype, constructed using Si photodiodes and a…
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…