Related papers: Trajectory-dependent electronic excitations by lig…

We have measured the electronic energy-loss straggling of protons, helium, boron and silicon ions in silicon using a transmission time-of-flight approach. Ions with velocities between 0.25 and 1.6 times the Bohr velocity were transmitted…

We have simultaneously measured angular distributions and electronic energy loss of helium ions and protons directly transmitted through self-supporting, single-crystalline silicon foils. We have compared the energy loss along channelled…

The charge exchange and energy loss processes provide insights into fundamental processes across physical, chemical, and engineered systems. While this field has been thoroughly investigated, a clear study on trajectory effects is lacking,…

The energy losses of energetic ions in materials depend on both nuclear and electronic interactions. In channeling geometries, the stopping effect of these interactions can be highly reduced, resulting in deeper ion penetration.…

We investigated the specific electronic energy deposition by protons and He ions with keV energies in different transition metal nitrides of technological interest. Data were obtained from two different time-of-flight ion scattering setups…

Fast dynamic processes between electrons in solids and a foreign atom represent a fundamental challenge for describing interactions in many-body systems and are a prerequisite for modelling materials modification. We experimentally…

Accurately predicting the electronic energy deposition of ions in materials is an important challenge in both fundamental and applied research. While employing ab initio simulations to investigate electronic stopping of ions in matter holds…

We use energy discrimination of keV ions transmitted through a thin, single-crystalline silicon membrane to correlate specific angular distribution patterns formed in channelling geometry with trajectory-dependent electronic energy loss.…

Electronic energy loss of hydrogen ions in HfO2 was investigated in a wide energy range in the medium and low energy ion scattering regime. Experiments by Time-Of-Flight Medium-Energy Ion Scattering (TOF-MEIS) with proton and deuteron…

We report on the observation of a strong perturbation of the electron gas induced by 20 MeV/u U$^{91+}$ ions and 13 MeV/u Pb$^{81+}$ ions channeled in silicon crystals. This collective response (wake effect) in-duces a shift of the…

We present $ab$ $initio$ study of the electronic stopping power of protons and helium ions in an insulating material, HfO$_{2}$. The calculations are carried out in channeling conditions with different impact parameters by employing…

Absolute cross sections are measured for charge-exchange, ionization, and excitation within the same experimental setup for the Li$^{+}-$Ar, K$^{+}-$ Ar, and Na$^{+}-$ He collisions in the ion energy range $0.5-10$ keV. Results of our…

Angle- and energy-loss- resolved distributions of helium atoms grazingly scattered from a Ag(110) surface along low indexed crystallographic directions are investigated considering impact energies in the few keV range. Final projectile…

We investigate the dependence of the yield of positive secondary ions created upon impact of primary He, B and Ne ions on geometry and electronic and nuclear energy deposition by the projectiles. We employ pulsed beams in the medium energy…

We report on the effects of electron collision and indirect ionization processes, occurring at photoexcitation and electron kinetic energies well below 30 eV on the photoemission spectra of liquid water. We show that the nascent…

Electronic stopping of H and He ions in metals and insulators is analyzed at velocities below 0.2 atomic units, i.e. below 1 keV for H and below 4 keV for He. In metals, stopping of H ions is affected by d-electrons only when the d-band…

We present a method to measure the kinetic energy of electrons emitted upon ion impact via their time-of-flight. Pulsed beams of H$^{+}$, D$_2^{+}$, He$^{+}$ and Ne$^{+}$ ions with velocities between 0.4 and 3.5 a.u. are transmitted through…

This study provides accurate results for the electronic stopping cross-sections of H, He, N, and Ne in silicon in low to intermediate energy ranges using various non-perturbative theoretical methods, including real-time time-dependent…

This paper presents a quantitative analysis of the impact of inelastic collisions of ultra-relativistic electrons and positrons, passing through oriented crystalline targets, on the channeling efficiency and on the intensity of the…

Electronic stopping cross sections (SCS) of nickel, silicon and nickel-silicon alloys for protons and helium (He) ions are studied in the regime of medium and low energy ion scattering, i.e., for ion energies in the range from 500 eV to 200…