Related papers: Active Gate Drive with Gate-Drain Discharge Compen…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
The multi-phase inverter has become more complicated, particularly in an Electric Vehicle (EV)'s power train, which requires a robust fault protection system. The proposed active short circuit and safe discharge mechanisms are also included…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
Distributed secondary control plays an important role in DC microgrids, since it ensures system control objectives, which are power sharing and DC bus voltage stability. Previous studies have suggested using a control architecture that…
We measure the rectified dc currents resulting when a 3-terminal semiconductor device with gate-dependent conductance is driven with an ac gate voltage. The rectified currents exhibit surprisingly complex behaviour as the dc source-drain…
We study charge transport in a source-channel-drain system with a time-varying applied gate potential acting on the channel. We calculate both the current flowing from the source into the channel and out of the channel into the drain. The…
This paper proposes an advanced control strategy to eliminate both current sharing error and DC circulating current caused by line impedance mismatched and measurement errors in islanded AC microgrid system. The proposed adaptive virtual…
An increasing integration of photovoltaic units, electric vehicle chargers, heat pumps, and energy storage systems challenges low-voltage power grids and can cause voltage range violation, loss of stability, (local) overload of lines, and…
This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first comprehensive study in literature on this topic. The review…
Many high voltage applications are realized with series connected thyristors. Voltage imbalance among series connected thyristors during steady state as well as in transients is one of the major concerns. This voltage imbalance is mitigated…
Compared with silicon (Si) power devices, Silicon carbide (SiC) devices have the advantages of fast switching speed and low on-resistance. However, the effects of non-ideal characteristics of SiC MOSFETs and stray parameters (especially…
Gatemon qubits are based on a superconductor-quantum dot-superconductor (S-QD-S) junction which enables in situ electrostatic tuning via a gate electrode. For a single-channel QD this structure gives rise to two subgap Andreev bound states…
Novel spin transport behavior is theoretically shown to result from replacing the usual metal (or poly-silicon) gate in a silicon field-effect transistor with a ferromagnet, separated from the semiconductor by an ultra-thin oxide. The…
Due to the increasing popularity of DC loads and the potential for higher efficiency, DC microgrids are gaining significant attention. DC microgrids utilize multiple parallel converters to deliver sufficient power to the load. However, a…
We explore the possibility of inducing in heterostructures driven by an ac gate voltage the coherent current suppression recently found for nanoscale conductors in oscillating fields. The destruction of current is fairly independent of the…
The design of gate drivers is an important topic in power converter topologies that can help reduce switching losses and increase power density. Gate driving techniques that offer zero-voltage switching and/or zero current switching have…
Power transistors such as IGBTs and MOSFETs are a source of electromagnetic interference (EMI) during switching due to rapid voltage/current variations. Increasing the switching time can reduce the generation of EMI but increases losses.…
Gate bias stress instability in organic field-effect transistors (OFETs) is a major conceptual and device issue. This effect manifests itself by an undesirable shift of the transfer characteristics and is associated with long term charge…
As ASIC supply voltages approach one volt, the source-impedance goals for power distribution networks are driven ever lower as well. One approach to achieving these goals is to add decoupling capacitors of various values until the desired…
In this work, we present new secondary regulators for current sharing and voltage balancing in DC microgrids, composed of distributed generation units, dynamic RLC lines, and nonlinear ZIP (constant impedance, constant current, and constant…