Related papers: Tunable intraband optical conductivity and polariz…
Image sensors with internal computing capability enable in-sensor computing that can significantly reduce the communication latency and power consumption for machine vision in distributed systems and robotics. Two-dimensional semiconductors…
Using the Tight Binding (TB) parameters extracted from Density Functional Theory (DFT) and Recursive Green's Function method, it is shown that skewed-zigzag black phosphorous (phosphorene) nanoribbons obtain large and tuneable bandgap in…
We present a calculation of Third Harmonic Generation (THG) for two-band systems using the length gauge that avoids unphysical divergences otherwise present in the evaluation of the third order current density response. The calculation is…
Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions…
Thanks to its tunable infrared band-gap and to its anisotropic conduction properties, black phosphorus represents a very unique 2D material, whose potential in the engineering of new devices still needs to be fully explored. We investigate…
Crystalline black nitrogen (BN) is an allotrope of nitrogen with the black phosphorus (BP) structure recently synthesized at high pressure by two independent research groups [Ji et al., Sci. Adv. 6, eaba9206 (2020); Laniel et al., Phys.…
Black phosphorus is a quasi-two-dimensional layered semiconductor with a narrow direct band gap of 0.3 eV. A giant surface Stark effect can be produced by the potassium doping of black phosphorus, leading to a semiconductor to semimetal…
Two-dimensional black phosphorus has been configured as field-effect transistors, showing an intrinsic symmetric ambipolar transport characteristic. Here, we demonstrate the strongly modulated ambipolar characteristics of few-layer black…
We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…
Light-emitting diodes (LEDs) based on III-V/II-VI materials have delivered a compelling performance in the mid-infrared (mid-IR) region, which enabled wide-ranging applications, including environmental monitoring, defense and medical…
We present polarization-resolved transient transmission measurements on multi-layer black phosphorus. Background free two-color pump-probe spectroscopy measurements are carried out on mechanically exfoliated black phosphorus flakes that…
In this paper we have systematically studied the electronic instability of pressured black phosphorous (BP) under strong magnetic field. We first present an effective model Hamiltonian for pressured BP near the Lifshitz point. We show that…
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…
Artificial semiconductor heterostructures played a pivotal role in modern electronic and photonic technologies, providing a highly effective mean for the manipulation and control of carriers, from the visible to the far-infrared. Despite…
It attracts wide interest to seek universe saturable absorber covering wavelengths from near infrared to mid-infrared band. Multilayer black phosphorus, with variable direct bandgap (0.3-2 eV) depending on the layer number, becomes a good…
Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potential high carrier velocity and large density-of-states.…
In the fast growing two-dimensional (2D) materials family, anisotropic 2D materials, with their intrinsic in-plane anisotropy, exhibit a great potential in optoelectronics. One such typical material is black phosphorus (BP), with a…
We report the fabrication, characterization, and modeling of photoconductive antennas using 40 nm thin-film flakes of black phosphorus (BP) as the photoconductor and hexagonal boron nitride (hBN) as a capping layer to prevent oxidation of…
Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will…
In this work, we reported uniform layer-by-layer sublimation of black phosphorus under heating below 600 K. The uniformity and crystallinity of BP samples after thermal thinning were confirmed by Raman spectra and 2D Raman imaging. A…