Related papers: Defect tolerant device geometries
Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three…
Non-equilibrium defects often dictate macroscopic functional properties of materials. In intercalation hosts, widely used in rechargeable batteries, high-dimensional defects largely define reversibility and kinetics1,2,3,4. However,…
The rigorous coupled-wave approach (RCWA) and the differential evolution algorithm (DEA) were coupled in a practicable approach to maximize absorption in optical structures with three-dimensional morphology. As a model problem, optimal…
Defect induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap could be prolonged by several orders of magnitude as compared to shallow trap, resulting…
Unlocking the full potential of passivating contacts, increasingly popular in the silicon solar cell industry, requires determining the minority carrier lifetime. Minor passivation drops limit the functioning of solar cells, however, they…
The influence of controlable parameters like temperature and wavelength on the trajectories of light in a nematic liquid crystal with topological defects is studied through a geometric model. The model incorporates phenomenological details…
Defect modes are investigated in a band gap of an electrically tunable one-dimensional photonic crystal infiltrated with a twisted-nematic liquid crystal (1D PC/TN). Their frequency shift and interference under applied voltage are studied…
Selecting suitable charge transport layers and suppressing non-radiative recombination at interfaces to the absorber layer are vital to maximize the efficiency of halide perovskite solar cells. In this work, high-quality perovskite thin…
We develop a practical first-principles methodology to determine nonradiative carrier capture coefficients at defects in semiconductors. We consider transitions that occur via multiphonon emission. Parameters in the theory, including…
We propose Auger-like process assisted by quantum defects in metal halide perovskite quantum dots, where a charge carrier in the ground state of the quantum dot is trapped by quantum defects, resulting in another charge carrier in defect is…
A key challenge in the development of materials for the next generation of solar cells, sensors and transistors is linking macroscopic device performance to underlying microscopic properties. For years, fabrication of devices has been…
Many properties of photonic structures rely on band topology characterized by the integer invariants that can change during the topological transitions and give rise to the disorder-robust topological edge, corner, or interface states.…
Here, we focus on induced degradation and spatial inhomogeneity of organic photovoltaic devices under different environmental conditions, uncoupled from the influence of a hole-transport (HT) layer. During testing of devices comprising the…
Polymer solar cells are considered as very promising candidates for development of photovoltaics of the future. They are cheap and easy to fabricate, however, up to now, they possess fundamental drawback, low effectiveness. In the most…
Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the…
In this article, we investigate the effect of prolonged light exposure on silicon heterojunction solar cells. We show that, although light exposure systematicallyimproves solar cell efficiency in the case of devices using intrinsic and…
Methylammonium lead iodide perovskite has revolutionized the field of third generation solid-state solar cells leading to simple solar cell structures1 and certified efficiencies up to 20.1%. Recently the peculiar light harvesting…
The modification of electronic band structures and the subsequent tuning of electrical, optical, and thermal material properties is a central theme in the engineering and fundamental understanding of solid-state systems. In this scenario,…
Radiation-induced defects can have a significant impact on the longevity and performance of semiconductor devices. We present an Atomistically Informed Device Engineering (AIDE) method that integrates first-principles defect properties and…
Lead halide perovskites (LHPs) are promising materials for opto-electronics and photovoltaics, thanks to favorable characteristics and low manufacturing costs enabled by solution processing. In light of this, it is crucial to assess the…