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We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the…
We report on the first integration of an antiferromagnetic Heusler compound acting as a pinning layer into magnetic tunneling junctions. The antiferromagnet Ru$_2$MnGe is used to pin the magnetization direction of a ferromagnetic Fe layer…
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…
Coherent spin-dependent electronic transport is investigated in a molecular junction made of polymeric chain attached to ferromagnetic electrodes (Ni and Co, respectively). Molecular system is described by a simple Huckel model, while the…
Based on spin-density functional theory we calculate the electronic structure of a tunnel junction consisting of two magnetic Fe layers separated by an insulating vacuum barrier selfconsistently. For the conductance the Landauer formula is…
Molecular conduction channels between two ferromagnetic electrodes can produce strong exchange coupling and dramatic effect on the spin transport, thus enabling the realization of novel logic and memory devices. However, fabrication of…
We investigated dependence of tunnel magnetoresistance effect in CoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barrier sputtering. Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorr resulted in smooth…
Multiferroics are singular materials that can display simultaneously electric and magnetic orders. Some of them can be ferroelectric and ferromagnetic and, for example, provide the unique opportunity of encoding information independently in…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
The Mn$_3$Ga Heusler compound and related alloys are the most promising materials for the realization of spin-transfer-torque switching in magneto tunneling junctions. Improved performance can be achieved by high quality interfaces in these…
Many phenomena in condensed matter are thought to result from competition between different ordered phases. Palladium is a paramagnetic metal close to both ferromagnetism and superconductivity, and is therefore a potentially interesting…
We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at…
Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance…
Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronics driven by the advantages of antiferromagnets producing no stray fields and exhibiting ultrafast magnetization dynamics. The efficient method to detect an AFM order…
We develop a theoretical model of magnon-assisted transport in a mesoscopic tunnel junction between a ferromagnetic metal and a normal (non-magnetic) metal. The current response to a bias voltage is dominated by the contribution of elastic…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
In this work we investigate the effect of the mechanical stress on the performance of magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy. We developed a 4-point bending setup, that allows us to apply a constant stress…
Current Induced Resistance Switching (CIS) was recently observed in thin tunnel junctions (TJs) with ferromagnetic (FM) electrodes and attributed to electromigration of metallic atoms in nanoconstrictions in the insulating barrier. The CIS…
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials,…
We report an investigation of the ferromagnetic semiconductor rare earth nitrides (RENs) for their potential for cryogenic-temperature electronics and spintronics application. We have indentified ohmic contacts suitable for the device…