Related papers: Giant Flexoelectricity in Bent Silicon Thinfilms
The direct magnetoelectric (ME) effect mediated by lattice strains induced in a ferroelectric film by a ferromagnetic substrate is evaluated using first-principles-based calculations. To that end, the strain sensitivity of ferroelectric…
Light-matter momentum transfer in plasmonic materials is theoretically discussed in the framework of plasmonic pressure mechanism taking into account non-equilibrium electron dynamics and thermalization process. We show that our approach…
We derive the complete flexoelectric tensor, including electronic and lattice-mediated effects, of an arbitrary insulator in terms of the microscopic linear response of the crystal to atomic displacements. The basic ingredient, which can be…
The dielectric properties of thin films are of paramount important in a variety of technological applications, and of fundamental importance for solid state research. In spite of this, there is currently no theoretical understanding of the…
Lithium ion batteries (LIBs) work under sophisticated external force field and its electrochemical properties could be modulated by strain. Owing to the electro-mechanical coupling, the change of micro-local-structures can greatly affect…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
Understanding the polarization switching mechanisms at play in ferroelectric materials is crucial for their exploitation in electronic devices. The conventional centrosymmetric reference structure-based mechanism which accounts for…
The development of efficient low-loss electro-optic and nonlinear components based on silicon or its related compounds, such as nitrides and oxides, is expected to dramatically enhance silicon photonics by eliminating the need for…
The paper investigates the behavior of 0 degree domain boundaries arising in uniaxial magnetic films with flexomagnetoelectric effect in a magnetic field. It is shown that at certain orientations of the magnetic field, it is possible to…
The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric,…
Multiferroic materials, characterized by the coexistence of ferroelectricity and ferromagnetism, may unveil band structures suggestive of complex phenomena and new functionalities. In this Letter, we analyze the band structure of EuO in its…
Spin excitations of magnetic thin films are the founding element for novel transport concepts in spintronics, magnonics, and magnetic devices in general. While spin dynamics have been extensively studied in bulk materials, their behaviour…
When a thin film is deposited on an incompatible elastic substrate, the film develops an elastic mismatch strain, causing the film-substrate system to bend. Stoney's equation relates the curvature of the bent film-substrate system with the…
We consider effects of an externally applied electrostatic field on superconductivity, self-consistently within a BCS mean field model, for a clean 3D metal thin film. The electrostatic change in superconducting condensation energy scales…
We show that inducing structural softness in regular magnetoelectric (ME) multiferroics -- i.e., tuning the materials to make their structure strongly reactive to applied fields -- makes it possible to obtain very large ME effects. We…
In the review we briefly analyze the state-of-art in the theory of flexoelectric phenomena and analyze how significantly the flexoelectric coupling can change the polar order parameter distribution in different ferroics and liquid crystals.…
The flexoelectric (FE) effect provides a linear coupling between electric polarization and orientational deformation in liquid crystals. It influences many electrooptical phenomena and it is used in some bistable nematic devices. A…
In the framework of a continuum theory, it is shown that the direct flexoelectric response of a finite sample essentially depends on the surface polarization energy, even in the thermodynamic limit where the body size tends to infinity. It…
In this paper, the dynamics of bias stress phenomenon in Sexithiophene (T6) Field Effect Transistors (FETs) has been investigated. T6 FETs have been fabricated by vacuum depositing films with thickness from 10 nm to 130 nm on Si/SiO2…
Dislocation is a very important one-dimensional defect in ferroelectrics. This work introduces an easy and flexible model of implementing the edge dislocation by introducing eigenstrain at the interface, and it could be easily extended to…