Related papers: Enhancement of spin Hall conductivity in W-Ta allo…
Spin-orbit-related effects offer a highly promising route for reading and writing information in magnetic units of future devices. These phenomena rely not only on the static magnetization orientation but also on its dynamics to achieve…
The magnetic spin Hall effect arises from a reactive counterpart of the dissipative spin response that is responsible for the ordinary spin Hall effect. This interpretation is supported by the dependence of spin Hall effect signals on the…
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect.…
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into…
Using the recently proposed definition of a conserved spin-current operator [J. Shi et al., Phys. Rev. Lett. 96, 076604 (2006)] we explore the frequency dependent spin Hall conductivity for a two-dimensional electron gas with Rashba and…
Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(\Omega cm)^{-1}]$, showing the possibility of spin Hall effect…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
Spin Waves (SWs) propagate through magnetic waveguides and interfere with each other without consuming noticeable energy, which opens the road to new ultra-low energy circuit designs. In this paper we build upon SW features and propose a…
The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing…
We present a detailed analysis of harmonic longitudinal and Hall voltage measurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers in reference to Pt/Co and Ta/Co bilayers. Enhancement of spin-orbit torques (SOTs) and…
Here we report the measurement of the interfacial spin accumulation induced by the spin Hall effect in Pt and W thin films using magneto-optical Kerr microscopy. We show that the Kerr rotation has opposite sign in Pt and W and scales…
Spin Hall effect (SHE), a fundamental transport phenomenon with non-zero spin current but vanishing charge current, has important applications in spintronics for the electrical control of spins. Owing to the half-spin nature of electrons,…
Iridium is a very promising material for spintronic applications due to its interesting magnetic properties such as large RKKY exchange coupling as well as its large spin-orbit coupling value. Ir is for instance used as a spacer layer for…
Despite the remarkable efforts in the past two decades, it has remained a major challenge to achieve switching of perpendicularly magnetized spin-orbit torque devices in a scalable, energy-efficient, field-free, integration-friendly, and…
Spin Hall effects have surged as promising phenomena for spin logics operations without ferromagnets. However, the magnitude of the detected electric signals at room temperature in metallic systems has been so far underwhelming. Here, we…
In metallic systems with spin-orbit coupling a longitudinal charge current may generate a transverse pure spin current; vice-versa an injected pure spin current may result in a transverse charge current. Such direct and inverse spin Hall…
We report that due to the orbital Hall effect, orbital pumping effects can occur in materials with weak spin-orbit coupling. Moreover, there is a positive correlation between the strength of the orbital Hall effect and the size of…
CoFeB is a very soft material, in which Domain Wall (DW) can be moved easily under a weak magnetic field. However, it is very difficult to move DWs in Ta\CoFeB\MgO nanowires with interfacial perpendicular magnetic anisotropy through a…
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins…