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One-dimensional organo-metal halide Perovskite (CH3NH3PbI3) nanorods whose diameter and length are dictated by the inner size of porous silicon nanotube templates have been grown, characterized and compared to bulk perovskites in the form…

Mesoscale and Nanoscale Physics · Physics 2017-03-01 Neta Arad-Vosk , Naama Rozenfeld , Roberto Gonzalez-Rodriguez , Jeffery L. Coffer , Amir Saar

Next-generation lithium-ion batteries with silicon anodes have positive characteristics due to higher energy densities compared to state-of-the-art graphite anodes. However, the large volume expansion of silicon anodes can cause high…

Numerical Analysis · Mathematics 2024-04-03 R. Schoof , G. F. Castelli , W. Dörfler

There is a general perception that large piezoelectric response in ferroelectric alloys requires tuning the system towards a morphotropic phase boundary (MPB), i.e., a composition driven inter-ferroelectric instability. Here we show that…

We determine the conditions in which negative differential resistance (NDR) appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100}, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations…

Mesoscale and Nanoscale Physics · Physics 2015-03-17 Frederico D. Novaes , Manuel Cobian , Alberto Garcia , Pablo Ordejon , Hiromu Ueba , Nicolas Lorente

Extensive irradiation of silicon crystal sensors by high energy particles in e. g. accelerators yield defect clusters of different types. Trapping of electrons and holes result in extended internal electric fields that drive remaining free…

Mesoscale and Nanoscale Physics · Physics 2022-12-22 Darius Abramavicius , Juozas Vidmantis Vaitkus

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers…

Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-silicon structures under constant dose rate is modeled by a…

Applied Physics · Physics 2025-05-20 Yu Song , Guanghui Zhang , Xue-Fen Cai , Yang Liu , Hang Zhou , Le Zhong , Gang Dai , Xu Zuo , Su-Huai Wei

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to electrically coupling crystalline oxides with semiconductors to realize functional behavior is…

Materials Science · Physics 2014-10-28 J. Moghadam , K. Ahmadi-Majlan , X. Shen , T. Droubay , M. Bowden , M. Chrysler , D. Su , S. A. Chambers , J. H. Ngai

Ferroelectric materials exhibit interesting electric, mechanical and optical properties. Particularly,tin-film lead zirconium titanate (PZT) has been used as a standard piezo-electric material in micro-electro-mechanical systems.…

Materials Science · Physics 2023-05-23 Suraj , Shankar Kumar Selvaraja

We study the structural evolution of Sr$_3$Ir$_2$O$_7$ as a function of pressure using x-ray diffraction. At a pressure of 54 GPa at room temperature, we observe a first-order structural phase transition, associated with a change from…

While classical percolation is well understood, percolation effects in randomly packed or jammed structures are much less explored. Here we investigate both experimentally and theoretically the electrical percolation in a binary composite…

Materials Science · Physics 2021-04-20 Shiva Pokhrel , Brendon Waters , Solveig Felton , Zhi-Feng Huang , Boris Nadgorny

Through controlled numerical simulations in a one dimensional fiber bundle model with local stress concentration, we established an inverse correlation between the strength of the material and the cracks which grow inside it - both the…

Statistical Mechanics · Physics 2024-02-20 Viswakannan R. K. , Subhadeep Roy

Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future non-volatile memory and logic devices. Here, the unconventional and weak electromechanical response of…

Nonlinearities play a critical role in the dynamics of mechanical resonators, enhancing sensitivity and enabling signal manipulation. Understanding the parameters affecting nonlinearities is crucial for developing strategies to counteract…

Applied Physics · Physics 2024-02-06 Nishta Arora , Priyanka Singh , Randhir Kumar , Rudra Pratap , Akshay Naik

Nonlinear transport enabled by symmetry breaking in quantum materials has aroused considerable interest in condensed matter physics and interdisciplinary electronics. However, the nonlinear optical response in centrosymmetric Dirac…

Silicene, a 2D analogue of graphene, has spurred a tremendous research interest in the scientific community for its unique properties essential for next generation electronic devices. In this work, for the first time, we present a molecular…

Materials Science · Physics 2017-11-22 Tawfiqur Rakib , Sourav Saha , Mohammad Motalab , Satyajit Mojumder , Md Mahbubul Islam

The shear-transformation-zone (STZ) theory of plastic deformation predicts that sufficiently soft, non-crystalline solids are linearly unstable against forming periodic arrays of microstructural shear bands. A limited nonlinear analysis…

Materials Science · Physics 2009-11-07 J. S. Langer

The first in situ quantitative synchrotron X-ray diffraction (XRD) study of plastic strain-induced phase transformation (PT) has been performed on $\alpha-\omega$ PT in ultra-pure, strongly plastically predeformed Zr as an example, under…

Materials Science · Physics 2020-02-12 K. K. Pandey , Valery I. Levitas

In the present Ph.D. Thesis we report an experimental investigation on the effects of gamma- and beta-ray irradiation and of subsequent thermal treatment on many types of a-SiO2 materials, differing in the production methods, OH- and…

Other Condensed Matter · Physics 2007-11-27 G. Buscarino

Electrically detected magnetic resonance is used to identify recombination centers in a set of Czochralski grown silicon samples processed to contain strained oxide precipitates with a wide range of densities (~ 1e9 cm-3 to ~ 7e10 cm-3).…

Materials Science · Physics 2012-01-11 V. Lang , J. D. Murphy , R. J. Falster , J. J. L. Morton