Related papers: Piezoresistance in defect-engineered silicon
The surfaces of most metals immersed in aqueous electrolytes have a several-nanometer-thick oxide/hydroxide surface layer. This gives rise to the existence of both metal|oxide and oxide|liquid electrotlyte interfaces, and makes it…
Plasticity in zirconium is controlled by 1/3<1-210> screw dislocations gliding in the prism planes of the hexagonal close-packed structure. This prismatic and not basal glide is observed for a given set of transition metals like zirconium…
We studied the influence of defect states on the laser excitation process in silicon using time-dependent density functional theory. We assumed two types of point defects: interstitial oxygen and silicon vacancies. We found that the…
We present a systematic analysis of point-contact Andreev reflection (PCAR) spectra for ferromagnetic materials, using both modeling and experimental data. We consider the relationship between ballistic and diffusive transport, the effect…
The defect-activity in halide perovskites remains a critical factor for the application in optoelectronics. The imperfections (vacancies, anti-sites, interstitials) formed in the lattice of the halide perovskites were considered as a main…
The ternary semiconductors NiZrSn and CoZrBi with C1_b crystal structure are introduced by calculating their basic structural, electronic and phononic properties using density functional theory. Both the gradient-corrected PBE functional…
The onset of retardation effects in atom-wall interactions is studied. It is shown that the transition range from the 1/z^3 short-range (van der Waals) interaction to the 1/z^4 long-range (Casimir) retarded interaction critically depends on…
The polarity-dependent resistive-switching across metal-Pr0.7Ca0.3MnO3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately…
Integrating In-Ga-Zn-oxide (IGZO) channel transistors in silicon-based ecosystems requires the resilience of the channel material to hydrogen treatment. Standard IGZO, containing 40% In (metal ratio) suffers from degradation under forming…
The ambient-temperature high-pressure behaviour of (La0.2Nd0.2Sm0.2Gd0.2Yb0.2)2Zr2O7 zirconate (HEZ) nanopowders with three different average particle sizes (~25nm, ~45 nm and ~ 68nm) were studied using synchrotron X-ray diffraction…
Divacancy in its neutral charge state (V$_\text{C}$V$_\text{Si}^0$) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC four different V$_\text{C}$V$_\text{Si}$ configurations can…
Hydrogenated amorphous silicon is well known for its various alloys and wide ranging opto-electronic properties. Hydrogenated silicon sub-oxide (aSiO:H) is one of them. The effect of boron doping on optoelectronic properties of the aSiO:H…
In the present paper, the phenomenological model developed by the authors in previous papers has been used to evaluate the degradation induced by hadron irradiation at the future accelerator facilities or by cosmic protons in high…
The microstructure of SiNx is strongly affected by its stoichiometry, x. The stoichiometry of SiNx thin films can be modified by adjusting the gas flow rates during LPCVD deposition. The deficiency or excess of Si atoms enhance the…
The irradiation represents a useful tool for determining the characteristics of defects in semiconductors as well as a method to evaluate their degradation, fact with important technological consequences. In this contribution, starting from…
The principal obstacle to long-time operation of silicon detectors at the highest energies in the next generation of experiments arises from bulk displacement damage which causes significant degradation of their macroscopic properties. The…
A study of donor electron spins and spin--dependent electronic transitions involving phosphorous ($^{31}$P) atoms in proximity of the (111) oriented crystalline silicon (c-Si) to silicon dioxide (SiO$_{2}$) interface is presented for…
Piezoresistive strain gauges allow for electronic readout of mechanical deformations with high fidelity. As piezoresistive strain gauges are aggressively being scaled down for applications in nanotechnology, it has become critical to…
The analysis of the structure, chemical stability, electronic and ferroelectric properties of the interfaces between Pt(001) and PbZrTiO$_3$(001) (PZT) have been performed with $ab$ $initio$ methods. We show that the chemical environment…
A thorough understanding of the small-signal response of solar cells can reveal intrinsic device characteristics and pave the way for innovations. This study investigates the impedance of crystalline silicon PN junction devices using TCAD…