Related papers: Spatially Resolved Persistent Photoconductivity in…
We investigate a vertically-stacked hybrid photodiode consisting of a thin n-type molybdenum disulfide (MoS$_{2}$) layer transferred onto p-type silicon. The fabrication is scalable as the MoS$_{2}$ is grown by a controlled and tunable…
Hot carrier-based energy conversion systems could double the efficiency of conventional solar energy technology or drive photochemical reactions that would not be possible using fully thermalized, ``cool'' carriers, but current strategies…
The layered transition metal dichalcogenides (TMDs) have attracted considerable interest due to their unique electronic and optical properties. Here we report electric field induced strong electroluminescence in multi-layer MoS2 and WSe2.…
The ultrathin nature of two-dimensional monolayer semiconductors yields optoelectronic properties which are highly responsive to changes in free-carrier density, making it imperative to masterfully control their doping levels. We report a…
In the last decade atomically thin 2D materials have emerged as a perfect platform for studying and tuning light-matter interaction and electronic properties in nanostructures. The optoelectronic properties in layered materials such as…
In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this…
Two-dimensional transition metal dichalcogenide (TMD) phototransistors have been object of intensive research during the last years due to their potential for photodetection. Photoresponse in these devices is typically caused by a…
The two-dimensional semiconductor MoS2 in its mono- and few-layer form is expected to have a significant exciton binding energy of several 100 meV, leading to the consensus that excitons are the primary photoexcited species. Nevertheless,…
Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different…
Understanding interfacial interactions in two-dimensional (2D) heterostructures is essential for advancing optoelectronic and quantum technologies. We investigate metal-organic chemical vapor deposition (MOCVD)-grown WSe$_2$ films (one to…
Monolayer transition metal dichalcogenides (TMDCs), like MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, feature direct bandgaps, strong spin-orbit coupling, and exciton-polariton interactions at the atomic scale, which could be harnessed for…
We study the rise and decay times in BP-MoS2 heterojunctions through gate- and wavelength-dependent scanning photocurrent measurements. Our results have shown that the Schottky barrier at the MoS2-metal interface plays an important role in…
There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic,…
The dynamics of charge carriers in amorphous semiconductors fundamentally differ from those in crystalline semiconductors due to the lack of long-range order and the high defect density. Despite intensive technology-driven research…
Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic…
Photo-induced charge separation in transition metal dichalcogenide heterobilayers is being explored for moir\'e excitons, spin-valley polarization, and quantum phases of excitons/electrons. While different momentum spaces may be critically…
Intensive efforts have been devoted to exploit novel optoelectronic devices based on two-dimensional (2D) transition-metal dichalcogenides (TMDCs) owing to their strong light-matter interaction and distinctive material properties. In…
Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging.…
Spatially-resolved techniques of laser scanning microscopy (LSM) have been used to image simultaneously the spatial variations of (i) rf current flow, J$_RF$(x,y), of (ii) areas of resistive dissipation and (iii) the sources of microwave…
Ultrathin sheets of MoS2 are a newly discovered 2D semiconductor that holds great promise for nanoelectronics. Understanding the pattern of current flow will be crucial for developing devices. In this talk, we present images of current flow…