Related papers: High-Frequency GaAs Optomechanical Bullseye Resona…
AlGaAs/GaAs coatings are being considered as coating candidates for gravitational-wave detectors. In this paper we investigate the birefringence properties of this crystalline semiconductor material by modulating the optical illumination on…
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $\gamma$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant…
We demonstrate the generation of a strong mechanical squeezing in a dissipative optomechanical system by introducing a periodic modulation in the amplitude of a single-tone laser driving the system. The mechanical oscillator is…
We report accurate, calculated electronic, transport, and bulk properties of zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic, self-consistent calculations employed a local density approximation (LDA) potential and the…
Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for…
Gallium selenide (GaSe) is one of layered group-III metal monochalcogenides, which has an indirect bandgap in monolayer and direct bandgap in bulk unlike other conventional transition metal dichalcogenides (TMDs) such as MoX2 and WX2 (X=S…
The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential…
The nanoscale resistive switching characteristics of gallium phosphide (GaP) thin films directly grown on Si are investigated as a function of incident light. Firstly, as-grown GaP films show a high RON/ROFF (~10^4), shown to arise from the…
Optical measurements of a nanoscale silicon optomechanical crystal cavity with a mechanical resonance frequency of 3.6GHz are performed at sub-kelvin temperatures. We infer optical-absorption-induced heating and damping of the mechanical…
Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…
Gallium arsenide nanowires were synthesized by gallium-assisted molecular beam epitaxy. By varying the growth time, nanowires with diameters ranging from 30 to 160 nm were obtained. Raman spectra of the nanowires ensembles were measured.…
A 16-channel optical phased array is fabricated on a gallium arsenide photonic integrated circuit platform with a low-complexity process. Tested with a 1064 nm external laser, the array demonstrates 0.92{\deg} beamwidth, 15.3{\deg}…
$\beta$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit…
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial.…
Twisted light with orbital angular momentum (OAM) has been extensively studied for applications in quantum and classical communications, microscopy, and optical micromanipulation. Ejecting the naturally high angular momentum whispering…
Traditionally, advancements in semiconductor devices have been driven by lattice-matched heterojunctions with tailored band alignments through heteroepitaxy techniques. However, there is significant interest in expanding the capabilities of…
Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers…
Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical and excitonic properties. It was understood already in the 1960s, and recently rediscovered, that many TMDs possess high refractive index…
Advancement in quantum information and quantum technologies has ushered in a new era of technological revolution in large scale atomistic simulation and efficient system on a chip device fabrication. This has led to innovative ways of…
A promising alternative to Gaussian beams for use in strong field science is Bessel-Gauss (BG or Bessel-like) laser beams as they are easily produced with readily available optics and provide more flexibility of the spot size and working…