Related papers: Radiative capture rates at deep defects from elect…
We present a method to calculate the electronic charge density of periodic solids in the GW approximation, using the space-time method. We investigate for the examples of silicon and germanium to what extent the GW approximation is…
Lattice QCD calculations of hadron structure are a valuable complement to many experimental programs as well as an indispensable tool to understand the dynamics of QCD. I present a focused review of a few representative topics chosen to…
Defects such as vacancies and impurities could have profound effects on the transport properties of thermoelectric materials. However, it is usually quite difficult to directly calculate the thermoelectric properties of defect-containing…
Radiative double electron capture (RDEC) is a one-step process where two free (or quasi-free) target electrons are captured into a bound state of the projectile, e.g. into an empty K-shell, and the energy excess is released as a single…
We report on measurements of the quantum capacitance in graphene as a function of charge carrier density. A resonant LC-circuit giving high sensitivity to small capacitance changes is employed. The density of states, which is directly…
We report accurate, calculated electronic, transport, and bulk properties of zinc blende gallium arsenide (GaAs). Our ab-initio, non-relativistic, self-consistent calculations employed a local density approximation (LDA) potential and the…
Conduction and valence band-edge-property variations with position as well as defects giving rise to localized states in the energy gap can play a significant role in determining solar cell performance. Understanding their effects on a…
Electroweak radiative corrections to muon capture on nuclei are computed and found to be sizable. They enhance the capture rates for hydrogen and helium by 2.8% and 3.0% respectively. As a result, the value of the induced pseudoscalar…
Femtosecond time-resolved optical spectroscopy was used to systematically study photoexcited carrier relaxation dynamics in the intermediate-valence heavy fermion system Yb1-xLuxAl3 (0 < x < 1). Given the demonstrated sensitivity of this…
We investigate the transport and adsorption of solutes within graded porous filters characterised by a spatially varying microstructure. While classical homogenisation theory typically assumes periodic media, we employ the method of…
We investigate both analytically and by numerical simulation the kinetics of a microscopic model of hard rods adsorbing on a linear substrate, a model which is relevant for compaction of granular materials. The computer simulations use an…
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g.…
We present a lattice QCD calculation of the radiative leptonic decay rates of the kaon, improving upon our previous work, arXiv:2006.05358. Our analysis uses gauge ensembles generated by the Extended Twisted Mass Collaboration (ETMC) with…
A self-consistent method for calculating electron transport through a molecular device is proposed. It is based on density functional theory electronic structure calculations under periodic boundary conditions and implemented in the…
Towards radiation tolerant sensors for pico-second timing, several dopants are explored. Using a common mask, CNM produced LGADs with boron, boron + carbon and gallium implanted gain layers are studied under neutron and proton irradiation.…
Charge carrier transport in single-layer graphene with one-dimensional charged defects is studied theoretically. Extended charged defects, considered an important factor for mobility degradation in chemically-vapor-deposited graphene, are…
A new formalism to calculate the transmission coefficient t of electrons from a material L into the same material L through a barrier B is presented. The barrier B is arbitrary and can be metallic, semiconducting or insulating. The…
We provide a phenomenological formula which describes the low-frequency optical absorption of charge carriers in disordered systems with localization. This allows to extract, from experimental data on the optical conductivity, the relevant…
In this paper the Boltzmann equation describing the carrier transport in a semiconductor is considered. A modified Chapman-Enskog method is used, in order to find approximate solutions in the weakly non-homogeneous case. These solutions…
During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…