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Understanding charge transfer (CT) between two chemical entities and subsequent change in their charge densities is essential not only for molecular species but also for various low-dimensional materials. Because of their extremely high…

Materials Science · Physics 2021-08-04 Haneul Kang , Kwanghee Park , Sunmin Ryu

Doping of strongly layered ionic oxides is an established paradigm for creating novel electronic behavior. This is nowhere more apparent than in superconductivity, where doping gives rise to high temperature superconductivity in cuprates…

Superconductivity · Physics 2013-07-17 E. R. Ylvisaker , W. E. Pickett

Molecular motions and chemical reactions occurring in constrained space play key roles in many catalysis and energy storage applications. However, its understanding has been impeded by difficulty in detection and lack of reliable model…

Materials Science · Physics 2021-07-13 Haneul Kang , Sunmin Ryu

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

Materials Science · Physics 2024-10-11 Raagya Arora , Ariel R. Barr , Daniel T. Larson , Michele Pizzochero , Efthimios Kaxiras

Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined…

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic…

Two-dimensional materials represented by graphene and transition metal dichalcogenides undergo charge transfer (CT) processes and become hole-doped in strong mineral acids. Nonetheless, their mechanisms remain unclear or controversial. This…

Materials Science · Physics 2021-10-06 Kwnaghee Park , Sunmin Ryu

In charged water microdroplets, which occur in nature or in the lab upon ultrasonication or in electrospray processes, the thermodynamics for reactive chemistry can be dramatically altered relative to the bulk phase. Here, we provide a…

Chemical Physics · Physics 2024-05-06 Joseph P. Heindel , R. Allen LaCour , Teresa Head-Gordon

A variational Monte Carlo calculation is used for studying the ground state of the two-dimensional Hubbard model, including hopping between both nearest and next-nearest neighbor sites. Superconductivity with d-wave symmetry is found to be…

Strongly Correlated Electrons · Physics 2008-08-05 D. Eichenberger , D. Baeriswyl

As a typical hole-doped cuprate superconductor, Bi 2 Sr 2 CaCu 2 O 8+{\delta} (Bi2212) carrier doping is mostly determined by its oxygen content. Traditional doping methods can regulate its doping level within the range of hole doping. Here…

High-transition-temperature superconductivity arises in copper oxides when holes or electrons are doped into the CuO2 planes of their insulating parent compounds. While hole-doping quickly induces metallic behavior and superconductivity in…

Bi$_2$Se$_3$ is one of the most promising topological insulators, but it suffers from intrinsic n-doping due to Se-vacancies, which shifts the Fermi level into the bulk conduction band, leading to topologically trivial carriers. Recently it…

Materials Science · Physics 2023-10-25 Cheng Fan , Kazuyuki Sakamoto , Peter Krüger

The parent compounds of the copper oxide high-Tc superconductors are unusual insulators. Superconductivity arises when they are properly doped away from stoichiometry1. In Bi2Sr2CaCu2O8+x, superconductivity results from doping with excess…

The doping of semiconductor materials is a fundamental part of modern technology, but the classical approaches have in many cases reached their limits both in regard to achievable charge carrier density, as well as mobility. Modulation…

Materials Science · Physics 2019-07-08 Mirko Weidner , Anne Fuchs , Thorsten J. M. Bayer , Karsten Rachut , Getnet K. Deyu , Andreas Klein

Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The observed upshift of the Raman G band…

Materials Science · Physics 2012-01-23 Sunmin Ryu , Li Liu , Stephane Berciaud , Young-Jun Yu , Haitao Liu , Philip Kim , George W. Flynn , Louis E. Brus

Doping of a two-dimensional (2D) material by impurity atoms occurs \textit{via} two distinct mechanisms: absorption of the dopants by the 2D crystal or adsorption on its surface. To distinguish the relevant mechanism, we systematically dope…

Materials Science · Physics 2023-04-04 Joel Davidsson , Fabian Bertoldo , Kristian S. Thygesen , Rickard Armiento

Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or…

Materials Science · Physics 2019-08-14 Sehoon Oh , June Yeong Lim , Seongil Im , Hyoung Joon Choi

Controlled modulation of electronic band structure in two-dimensional (2D) materials via doping is crucial for devices fabrication. For instance doped graphene has been envisaged for various applications like sensors, super-capacitors,…

Materials Science · Physics 2025-01-08 Imtiaz Noor Bhatti , J. Avila , Z. Chen , A. Baron , Y. Zhang , A. Shukla , P. Dudin

Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical…

In the last decade atomically thin 2D materials have emerged as a perfect platform for studying and tuning light-matter interaction and electronic properties in nanostructures. The optoelectronic properties in layered materials such as…

Mesoscale and Nanoscale Physics · Physics 2024-10-07 Roberto Rosati , Ioannis Paradisanos , Ermin Malic , Bernhard Urbaszek
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