Related papers: Paramagnetic spin Hall magnetoresistance
Electrical resistivities can be different for charge currents travelling parallel or perpendicular to the magnetization in magnetically ordered conductors or semiconductors, resulting in the well-known planar Hall effect and anisotropic…
Spin-torque ferromagnetic resonance (ST-FMR) arises in heavy metal/ferromagnet heterostructures when an alternating charge current is passed through the bilayer stack. The methodology to detect the resonance is based on the anisotropic…
Spin Hall magnetoresistance (SMR) is an intriguing spin-dependent transport phenomenon in bilayers consisting of non-magnetic and magnetic layers. Here, we report on the influence of longitudinal spin current absorption by the magnetic…
We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting…
A large unidirectional magnetoresistance (UMR) ratio of UMR/$R_{xx}\sim$ $0.36\%$ is found in W/CoFeB metallic bilayer heterostructures at room temperature. Three different regimes in terms of the current dependence of UMR ratio are…
We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X=Hf, Ta, W, Re) heterostructures. Spin Hall magnetoresistance (SMR) is used to characterize the spin Hall…
The surface of a topological insulator hosts a very special form of a quasi-two dimensional metallic system when it is embedded in a topologically trivial medium like the vacuum. The electronic properties of this unusual 2D metal are…
We report on the electrical and magneto-transport properties of the contact formed between polycrystalline NiMnSb thin films grown using pulsed laser deposition (PLD) and n-type degenerate InSb (100) substrates. A negative giant…
Orthoferrites ($RE$FeO$_{3}$) containing rare-earth ($RE$) elements are 3D antiferromagnets (AFM) that exhibit characteristic weak ferromagnetism originating due to slight canting of the spin moments and display a rich variety of spin…
The ultrafast control of magnetisation states in magnetically ordered systems is a key technological challenge for developing memory devices operable at picosecond timescales or terahertz (THz) frequencies. Despite significant efforts in…
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hopping (VRH) mechanism of conductivity. Effect of large PMR is…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Spin-orbit effects appearing in topological insulators (TI) and at Rashba interfaces are currently revolutionizing how we can manipulate spins and have led to several newly discovered effects, from spin-charge interconversion and spin-orbit…
Magnetoresistance (MR) sensors provide cost-effective solutions for diverse industrial and consumer applications, including emerging fields such as internet-of-things (IoT), artificial intelligence and smart living. Commercially available…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…
Magnetic domain walls function as a wave guide for low energy magnons. In this paper we develop the theory for the non-local transport of these bound magnons through a ferromagnetic insulator that are injected and detected electrically in…
Non-uniform magnetic structures produce emergent electromagnetic phenomena such as the topological Hall effect and the spin-motive force (SMF). The experimental reports on the SMF, however, are very few and the relationship between the SMF…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
Strong magnetic field pulses associated with a relativistic electron bunch can imprint switching patterns in magnetic thin films that have uniaxial in-plane anisotropy. In experiments with Fe and FeCo alloy films the pattern shape reveals…
Phenomenology similar to the nonreciprocal charge transport violating Onsagers reciprocity relations can develop in directionally inhomogeneous conducting films with nonuniform Hall coefficient along the current trajectory. The effect is…