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Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although two-dimensional (2D) materials provide a…
PUBLISHED ON IEEE/ASME TRANSACTIONS ON MECHATRONICS, DOI: 10.1109/TMECH.2021.3100150. Ideally, accurate sensor measurements are needed to achieve a good performance in the closed-loop control of mechatronic systems. As a consequence, sensor…
Superconducting transitions are driven by thermal fluctuations close to the transition temperature, Tc. These fluctuations are averaged out in global measurements, leaving imprints on susceptibility and resistance measurements. Here, we use…
We study the feasibility of applying the Generator Coordinate Method (GCM) of self-consistent mean-field theory to calculate decay widths of composite particles to composite-particle final states. The main question is how well the GCM can…
Coulomb blockade thermometers (CBTs) are versatile and, in principle, primary thermometers operating down to the micro-Kelvin range but bias heating spoils the thermometry and the primary mode. Here, we introduce a method to extract the CBT…
The static linearity performance metrics of the GFET transconductor are studied and modeled. Closed expressions are proposed for second and third order harmonic distortion (HD2, HD3), second and third order intermodulation distortion…
The Effective Field Theory (EFT) approach is widely used in the search for possible deviations from the predictions of the Standard Model. Such an approximation of possible BSM physics is valid up to a certain levels of energy scale and…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source.…
Most previously proposed controllers are analyzed in the small-signal/quasi-steady regime rather than large-signal or transient stability for grid-forming inverters (GFMI). Additionally, methods that presume system-wide data--global…
Normalizing constant (also called partition function, Bayesian evidence, or marginal likelihood) is one of the central goals of Bayesian inference, yet most of the existing methods are both expensive and inaccurate. Here we develop a new…
In this contribution we report on further investigations of the recently-evaluated Constant-Fraction Time-over-Threshold (CF-ToT) method for neutron/gamma-ray pulse shape discrimination (PSD). The superiority of the CF-ToT PSD method over…
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts for the dependences of the electron and hole Fermi energies…
This paper extends the concept of generalized polarization tensors (GPTs), which was previously defined for inclusions with homogeneous conductivities, to inhomogeneous conductivity inclusions. We begin by giving two slightly different but…
The constrained gradient method (CGM) has recently been proposed to solve convex optimization and monotone variational inequality (VI) problems with general functional constraints. While existing literature has established convergence…
In this paper, we propose the Coupled Axial and Transverse currents (I) (CATI) method, as an efficient and accurate finite element approach for modelling the electric and magnetic behavior of periodic composite superconducting conductors.…
We develop a device model for p-i-n tunneling transit-time diodes based on single- and multiple graphene layer structures operating at the reverse bias voltages. The model of the graphene tunneling transit-time diode (GTUNNETT) accounts for…
A generalized method of image is developed to investigate the tunneling spectrum from the metal into a class of states, with the tight-binding dispersion fully included. The broken reflection symmetry is shown to be the necessary condition…
The Dirac voltage of a graphene field-effect transistor (GFET) stands for the gate bias that sets the charge neutrality condition in the channel, thus resulting in a minimum conductivity. Controlling its dependence on the terminal biases is…
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an…
The analytical theory for the voltage-current characteristics of the large inductance (L>100 pH) high-T_c DC SQUIDs that has been developed previously is consistently compared with the computer simulations and the experiment. The…