Related papers: Electro-optical imaging of electric fields in sili…
The effect of a constant electric field on two-photon absorption in a semiconductor is calculated using an independent-particle theory. The theoretical framework is an extension of a theory of the one-photon Franz-Keldysh effect [Wahlstrand…
A method is presented which allows to obtain the position-dependent electric field and charge density by fits to velocity profiles from edge-TCT data from silicon strip-detectors. The validity and the limitations of the method are…
We present the analytical method enables one to compute the optical functions i.e., reflectivity, transmission and absorption including the excitonic effects for a semiconductor crystal exposed to a uniform electric field for energy region…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
We introduce and analyze the properties of dynamical Franz-Keldysh effect, i.e. the change of density-of-states, or absorption spectra, of semiconductors under the influence of {\it time-dependent} electric fields. In the case of a harmonic…
Franz-Keldysh effect is expressed in the smearing of the absorption edge in semiconductors under high electric fields. While Franz and Keldysh considered a limited case of externally applied uniform electric field, the same effect may be…
Sensing electric fields with high sensitivity, high spatial resolution and at radio frequencies can be challenging to realize. Recently, point defects in silicon carbide have shown their ability to measure local electric fields by optical…
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The…
The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit…
We introduce an all-optical quantum-enhanced diagnostic for electric fields in low-temperature plasmas. Trace amounts of rubidium vapor, added to argon plasma, allow us to produce spectrally narrow electric field-sensitive optical…
Electric field measurement in plasmas permits quantitative comparison between the experiment and the simulation in this study. An electro-optic (EO) sensor based on Pockels effect is demonstrated to measure wave electric fields in the…
In (100)-oriented GaAs illuminated at normal incidence by a laser and its second harmonic, interference between one- and two-photon absorption results in ballistic current injection, but not modulation of the overall carrier injection rate.…
An ultrafast anisotropic electro-optic effect of the zinc sulfide crystal is predicted employing a numerical pump-probe simulation. The numerical results indicate that the time-dependence of the anisotropic response of ZnS exhibits a phase…
The possibility of the precise measurement of the electron beam energy using absorption of radiation by electrons in a static and homogeneous magnetic field in a range up to a few hundred GeV energies, was considered in [1]. With the…
High-quality spatially-resolved measurements of electric fields are critical to understanding charge injection, charge transport, and charge trapping in semiconducting materials. Here, we report a variation of frequency-modulated Kelvin…
The purpose of this project is to investigate the use of charge couple devices (CCDs) to detect electrons directly. This can be done in transmission electron microscopy (TEM) for electrons over 100 KeV, but for space plasma instruments,…
We study the linear optical absorption of bulk semiconductors in the presence of a homogeneous constant (dc) electric field with an approach suitable for including excitonic effects while working with many-band models. The absorption…
The ability to image electromagnetic fields holds key scientific and industrial applications, including electromagnetic compatibility, diagnostics of high-frequency devices, and experimental scientific work involving field interactions.…
The effect of a constant electric field on two-photon absorption in a direct band gap semiconductor is calculated using an independent-particle theory. Two band structure models for GaAs are used: a two-band parabolic model and an…
The electric field in mm-sized clouds of cold Rb^+-ions is measured using the Stark effect of Rydberg atoms embedded in the ion clouds. The ion clouds are produced by UV photoionization of laser-cooled rubidium atoms in a magneto-optic…