Related papers: Heterogeneously Integrated ITO Plasmonic Mach-Zehn…
The high demand for machine intelligence of doubling every three months is driving novel hardware solutions beyond charging of electrical wires given a resurrection to application specific integrated circuit (ASIC)-based accelerators. These…
One of the technical barriers impeding the wide applications of integrated photonic circuits is the lack of ultracompact, high speed, broadband electro-optical (EO) modulators, which up-convert electronic signals into high bit-rate photonic…
We design and demonstrate a monolithically integrated silicon photonic multichannel optical hybrid for versatile broadband coherent reception, addressing the critical limitations of current wavelength multiplexed systems in scalability and…
We investigate an optical switching mechanism for applications in active integrated photonic circuits. The mechanism utilizes a large nonlinearity of indium-tin-oxide (ITO) in epsilon-near-zero (ENZ) regime. The effect of optically induced…
The rapid expansion of cloud computing and artificial intelligence has driven the demand for faster optical components in data centres to unprecedented levels. A key advancement in this field is the integration of multiple photonic…
High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film…
Hybrid plasmonic photonic structures combine the plasmonic response with the photonic band gap, holding promise for utilization as optical switches and sensors. Here, we demonstrate the active modulation of the optical response in such…
Integrated quantum photonics requires compact, efficient, and low-power phase modulators. While silicon nitride (SiN) is a promising platform, existing modulators suffer from high power consumption, thermal crosstalk, or high driving…
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of…
Driven by the prospects of higher bandwidths for optical interconnects, integrated modulators involving materials beyond those available in silicon manufacturing increasingly rely on the Pockels effect. For instance, wafer-scale bonding of…
Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…
We demonstrate a platform for phase and amplitude modulation in silicon nitride photonic integrated circuits via piezo-optomechanical coupling using tightly mechanically coupled aluminum nitride actuators. The platform, fabricated in a CMOS…
Active photonic integrated circuits (PICs) in the visible spectrum are essential for on-chip applications, requiring low-loss waveguides with broad transparency and efficient, low-power phase modulation. Here, we demonstrate a compact,…
Transparent conducting oxides have recently gained great attention as CMOS-compatible materials for applications in nanophotonics due to their low optical loss, metal-like behavior, versatile/tailorable optical properties, and established…
The mid-infrared spectral range holds great promise for applications such as molecular spectroscopy and telecommunications. Many key molecules exhibit strong absorption features in this range, and free-space optical communication benefits…
Electro-optic modulation, the imprinting of a radio-frequency (RF) waveform on an optical carrier, is one of the most important photonics functions, being crucial for high-bandwidth signal generation, optical switching, waveform shaping,…
Scandium-doped aluminum nitride (AlScN) with an asymmetric hexagonal wurtzite structure exhibits enhanced second-order nonlinear and piezoelectric properties compared to aluminum nitride (AlN), while maintaining a relatively large bandgap.…
Vanadium dioxide (${\rm VO}_2$) is a phase change material (PCM) that exhibits a large change in complex refractive index on the order of unity upon switching from its dielectric to its metallic phase. Although this property is key for the…
Photonics has been one of the primary beneficiaries of advanced silicon manufacturing. By leveraging on mature complementary metal-oxide-semiconductor (CMOS) process nodes, unprecedented device uniformities and scalability have been…
By combining the large Purcell effect of photonic crystal nanocavity and the strong plasma dispersion effect of the transparent conductive oxides, ultra-compact silicon modulators with heterogeneously integrated indium-tin-oxide (ITO) can…