English
Related papers

Related papers: Unusual Electrical Conductivity Driven by Localize…

200 papers

In polar oxide interfaces phenomena such as conductivity, superconductivity, magnetism, one-dimensional conductivity and Quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces…

Strongly Correlated Electrons · Physics 2020-07-06 Gal Tuvia , Yiftach Frenkel , Prasanna K. Rout , Itai Silber , Beena Kalisky , Yoram Dagan

Two dimensional SrTiO3-based interfaces stand out among non-centrosymmetric superconductors due to their intricate interplay of gate tunable Rashba spin-orbit coupling and multi-orbital electronic occupations, whose combination…

Interface engineering is an extremely useful tool for systematically investigating materials and the various ways materials interact with each other. We describe different interface engineering strategies designed to reveal the origin of…

Materials Science · Physics 2016-09-19 Hans Boschker , Zhaoliang Liao , Mark Huijben , Gertjan Koster , Guus Rijnders

Understanding charge transfer at oxide interfaces is crucial for designing materials with emergent electronic and magnetic properties, especially in systems where strong electron correlations and spin-orbit coupling coexist.…

The infinite-layer nickelates, proposed as analogs to superconducting cuprates, provide a promising platform for exploring the mechanisms of unconventional superconductivity. However, the superconductivity under atmospheric pressure has…

Superconductivity · Physics 2025-01-23 Yin Yuan , Wu Mei , Ding Xiang , He Peiyi , Li Qize , Zhang Xiaowen , Zhu Ruixue , Mao Ruilin , Gao Xiaoyue , Shi Ruochen , Qiao Liang , Gao Peng

Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk…

Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials.…

Selective optical excitation of a substrate lattice can drive phase changes across hetero-interfaces. This phenomenon is a non-equilibrium analogue of static strain control in heterostructures and may lead to new applications in optically…

When insulator LaAlO3 is grown by epitaxy onto a TiO2-terminated {100} surface of insulator SrTiO3, the resulting system has a metallic character. This phenomenon has been associated with an electrostatic frustration at the interface, as…

Materials Science · Physics 2016-08-16 J. -L. Maurice , C. Carretero , M. -J. Casanove , K. Bouzehouane , S. Guyard , É. Larquet , J. -P. Contour

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice…

Strongly Correlated Electrons · Physics 2015-05-28 E. J. Moon , B. A. Gray , M. Kareev , J. Liu , S. G. Altendorf , F. Strigari , L. H. Tjeng , J. W. Freeland , J. Chakhalian

LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced…

The unique electronic structure found at interfaces between materials can allow unconventional quantum states to emerge. Here we observe superconductivity in electron gases formed at interfaces between (111) oriented KTaO$_3$ and insulating…

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with…

Materials Science · Physics 2021-07-09 T. C. van Thiel , J. Fowlie , C. Autieri , N. Manca , M. Šiškins , D. Afanasiev , S. Gariglio , A. D. Caviglia

The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…

Strongly Correlated Electrons · Physics 2015-07-21 Jun Zhou , Teguh Citra Asmara , Ming Yang , George A. Sawatzky , Yuan Ping Feng , Andrivo Rusydi

Polar discontinuities occurring at interfaces between two different materials constitute both a challenge and an opportunity in the study and application of a variety of devices. In order to cure the large electric field occurring in such…

In strongly correlated oxides, heterointerfaces, manipulating the interaction, frustration, and discontinuity of lattice, charge, orbital, and spin degrees of freedom, generate new possibilities for next generation devices. In this study,…

Electronic nematicity in iron pnictide materials is coupled to both the lattice and the conducting electrons, which allows both structural and transport observables to probe nematic fluctuations and the order parameter. Here we combine…

Strongly Correlated Electrons · Physics 2021-11-10 Joshua J Sanchez , Paul Malinowski , Joshua Mutch , Jian Liu , J-W. Kim , Philip J Ryan , Jiun-Haw Chu

The highly mobile electrons at the interface of SrTiO3 with other oxide insulators, such as LaAlO3 or AlOx, are of great current interest. A vertical gate voltage allows controlling a metal/superconductor-to-insulator transition, as well as…

The two-dimensional electron liquid, at the (001) interface between band insulators {L}a{A}l{O}$_3$ and {S}r{T}i{O}$_3$, undergoes Lifshitz transition as the interface is doped with carriers. At a critical carrier density, two new orbitals…

Strongly Correlated Electrons · Physics 2016-10-11 S. Nandy , N. Mohanta , S. Acharya , A. Taraphder