Related papers: Semiconductor quantum plasmons for high frequency …
The random-phase-approximation semiclassical scheme for description of plasmon excitations in large metallic nanospheres, with radius range 10-60 nm, is formulated in an all-analytical version. The spectrum of plasmons is determined…
Semiconductor thermistors operating in the variable range hopping conduction regime have been used in thermal detectors of all kinds for more than fifty years. Their use in sensitive bolometers for infrared astronomy was a highly developed…
Plasmonic structures are renowned for their capability to efficiently convert light into heat at the nanoscale. However, despite the possibility to generate deep sub-wavelength electromagnetic hot spots, the formation of extremely localized…
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
The resonant scattering of surface plasmon-polariton waves by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In contrast to non-resonant scattering by a localized…
We develop a theory for the plasmon spectrum in dirty superconductors across the entire temperature range. Starting with the microscopic Keldysh sigma model description, we link the plasmon dispersion $\omega(q)$ to the optical conductivity…
Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include visible and infrared. Here we show, through the use of first-principles…
Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark…
The spectral response and directional scattering of semiconductor-oxide core-shell spherical microparticles embedded in an insulating medium at low volume fraction are computed using Mie Theory and Multiscale Modelling methods. The surface…
Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with…
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control…
The generation of broadband squeezed states of light lies at the heart of high-speed continuous-variable quantum information. Traditionally, optical nonlinear interactions have been employed to produce quadrature-squeezed states. However,…
For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based…
Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely…
High-power, broadband frequency combs generated by semiconductor lasers have profound implications for on-chip spectroscopy. Here, we present a dry-etched racetrack quantum cascade laser that uses resonant radio-frequency injection to…
We theoretically investigate intersubband plasmon excitations in doped single wall carbon nanotubes (SWNTs) by examining the dependence of plasmon frequency on the nanotube diameter, chirality, and Fermi energy. The intersubband plasmons…
Radio-frequency discharges are performed in low magnetic fields (0-10 mT) using three types of helicon-wave exciting antennas with the azimuthal mode number of $|m|$ = 1. The most pronounced peak of plasma density is generated in the case…
The temperature of the semiconductor diode increases under strong light illumination whether thermoelectric cooler is installed or not, which changes the output wavelength of the laser (Lee M. S. et al., 2017). However, other…
Infrared plasmons in doped graphene nanostructures produce large optical absorption that can be used for narrow-band thermal light emission at tunable frequencies that strongly depend on the doping charge. By virtue of Kirchhoff's law,…
Optical excitation and subsequent decay of graphene plasmons can produce a significant increase in charge-carrier temperature. An efficient method to convert this temperature elevation into a measurable electrical signal at room temperature…