Related papers: Nanoscale dynamics during self-organized ion beam …
Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both…
Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times…
Two-level modeling for nanoscale pattern formation on silicon target by Ar$^+$ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength…
The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer length scales. In the case of Si surfaces at ambient…
Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the…
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…
The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
Erosion by ion-beam sputtering (IBS) of amorphous targets at off-normal incidence frequently produces a (nanometric) rippled surface pattern, strongly resembling macroscopic ripples on aeolian sand dunes. Suitable generalization of…
We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the…
We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is…
A new approach for characterizing the dislocation microstructure obtained from atomistic simulations is introduced, which relies on converting properties of discrete lines to continuous data. This data is represented by a number of density…
Ion-beam irradiation of an amorphizable material such as Si or Ge may lead to spontaneous pattern formation, rather than flat surfaces, for irradiation beyond some critical angle against the surface normal. It is observed experimentally…
Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below…
The time-dependent kinetics of formation and evolution of nano-size atomic clusters is investigated and illustrated with the nucleation dynamics of ion-seed Ar$_n$H$^+$ particles. The rates of growth and degradation of Ar-atomic shells…
The nucleation and growth kinetics of highly ordered nanocrystal superlattices during the evaporation of nanocrystal colloidal droplets was elucidated by in situ time resolved small-angle x-ray scattering. We demonstrated for the first time…
In this study, a multiphysics model fully coupling mass transport, deformation, phase field, and fatigue damage was developed to investigate the cracking and fracturing behaviours of Si particles during the single lithiation-delithiation…
We used the Coherent Grazing Incidence Small Angle X-Ray Scattering (Co-GISAXS) technique to study the average kinetics and nanoscale dynamics during early-stage a-WSi$_2$ sputter deposition. The kinetic and dynamic properties are examined…