Related papers: Observation of single phonon-mediated quantum tran…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We study a two-level quantum dot embedded in a phonon bath and irradiated by a time-dependent ac field and develope a method that allows us to extract simultaneously the full counting statistics of the electronic tunneling and relaxation…
We review the latest progress in understanding the fundamental noise properties of a coherent single electron emitter known as the mesoscopic capacitor. The system consists of a sub-micron cavity connected to a two-dimensional electron gas…
We report on long-term measurements of a highly coherent, non-tunable superconducting transmon qubit, revealing low-frequency burst noise in coherence times and qubit transition frequency. We achieve this through a simultaneous measurement…
We study the dynamics of many atoms in the recently proposed Single Atom Transistor setup [A. Micheli, A. J. Daley, D. Jaksch, and P. Zoller, Phys. Rev. Lett. 93, 140408 (2004)] using recently developed numerical methods. In this setup, a…
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample…
The linear transport properties of a model molecular transistor with electron-electron and electron-phonon interactions were investigated analytically and numerically. The model takes into account phonon modulation of the electronic energy…
Transport of charge carriers in mechanically soft semiconductors is mainly limited by their interaction with slow intermolecular phonons. Carrier motion exhibits a crossover from superdiffusive to subdiffusive, producing a distinct…
We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and…
Through advanced quantum mechanical simulations combining electron and phonon transport from first-principles self-heating effects are investigated in n-type transistors with a single-layer MoS2, WS2, and black phosphorus as channel…
We present an experimental realization of the transmon qubit, an improved superconducting charge qubit derived from the Cooper pair box. We experimentally verify the predicted exponential suppression of sensitivity to 1/f charge noise [J.…
We analyze the transport properties of a quantum dot with a harmonic degree of freedom (Holstein phonon) coupled to interacting one-dimensional metallic leads. Using Tomonaga-Luttinger model to describe the interacting leads we construct…
Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements but also because of its novel applications in many fields in physics. Quantum control has been…
We demonstrate that transport spectroscopy of single molecular magnets shows signatures of quantum tunneling at low temperatures. We find current and noise oscillations as function of bias voltage due to a weak violation of spin selection…
The radio-frequency Single-Electron Box is becoming an attractive charge sensor for semiconductor-based quantum computing devices due to its high sensitivity and small footprint, which facilitates the design of highly connected qubit…
We present a fully nonequilibrium calculation of the low-temperature transport properties of a single molecular quantum dot coupled to local phonon mode when an ac field is applied to the gate. The resonant behavior is shown in the…
Under strong drives, which are becoming necessary for fast high-fidelity operations, transmons can be structurally unstable. Due to chaotic effects, the computational manifold is no longer well separated from the remainder of the spectrum,…
In the literature, the study of electron transport in quantum devices is mainly devoted to DC properties. The fluctuations of the electrical current around these DC values, the so-called quantum noise, are much less analyzed. The…
The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the…
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot…