Related papers: Nanoscale Magnetic Domain Memory
The authors have investigated magnetic domain wall induced capacitance variation as a tool for the detection of magnetic reversal in magnetic nanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetization configurations. The switching…
We study the magnetic properties of nanoscale magnetic films with large perpendicular anisotropy comparing polarization microscopy measurements on Co_28Pt_72 alloy samples based on the magneto-optical Kerr effect with Monte Carlo…
Large-spin two-dimensional magnets are generally expected to develop conventional long-range order once the dominant exchange scale becomes appreciable. The layered spin-$3/2$ maple-leaf compound Na$_2$Mn$_3$O$_7$ defies this expectation:…
A set of equations describing the motion of a free magnetic nanoparticle in an external magnetic field in a vacuum, or in a medium with negligibly small friction forces is postulated. The conservation of the total particle momentum, i.e.…
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such asymmetry is particularly undesirable for magnetic random access memory applications…
Magnetic thin films exhibit a strong variation in properties depending on their degree of disorder. Recent coherent x-ray speckle experiments on magnetic films have measured the loss of correlation between configurations at opposite fields…
Understanding the stability of thin film nanomagnets with perpendicular magnetic anisotropy (PMA) against thermally induced magnetization reversal is important when designing perpendicularly magnetized patterned media and magnetic random…
In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of…
Magnetic random access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, the scaling of MRAM technologies is heavily affected by…
The most powerful magnets for high temperature applications are Sm-Co-based alloys with a microstructure that combines magnetically soft and hard regions. The microstructure consists of a dense domain-wall-pinning network that endows the…
We present a novel approach to detect millicharged dark matter (mDM) by using a high-sensitivity magnetometer coupled with the resonant and broadband readout circuits. In the external magnetic field, the interaction between mDM and the…
The current efforts to fabricate non-volatile magnetic recording media with a high areal density is deteriorated by the increasing temporal instability of the stored information. If the stored energy per magnetic particle competes with the…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
We show that nano-scale variations of the order parameter in strongly-correlated systems can induce local spatial regions such as domain walls that exhibit electronic properties representative of a different, but nearby, part of the phase…
Measurements of the magnetic irreversibility line and time-logarithmic decay of the magnetization are described for three $Fe_{2}O_{3}$ samples composed of regular amorphous, acicular amorphous and crystalline nanoparticles. The relaxation…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall…
Altermagnets with pronounced spin-splitting band structure, unconventional magnetic and crystal symmetries, and exotic magneto-transport properties have received immense interest in cutting-edge spintronics, materials science, and condensed…
The recording of planetary magnetic fields is often attributed to uniformly-magnetised nanoscopic iron oxides, called single-domain (SD). Yet, the main magnetic constituents of rocks are more complex, non-uniformly magnetised grains in…
The balance between low power consumption and high efficiency in memory devices is a major limiting factor in the development of new technologies. Magnetic random access memories (MRAM) based on CoFeB/MgO magnetic tunnel junctions (MTJs)…