Related papers: Extended Short-Wave Infrared Absorption in Group I…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
In this paper, a route to ultra-broadband absorption is suggested and demonstrated by a feasible design. The high absorption regime (absorption above 90%) for the suggested structure ranges from visible to mid-infrared (MIR), i.e. for the…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator…
Engineering nanophotonic mode dispersions in ultrathin, planar structures enables significant control over infrared perfect absorption (PA) and thermal emission characteristics. Here, using simulations, the wavelength and angular ranges…
Thin films are preferred for high photocurrent conversion efficiency, but strong photon absorption at photon energies below the bandgap (near and shortwave infrared) typically requires thicker semiconductor layers. To address this tradeoff,…
Shortwave-infrared(SWIR) spectral information, ranging from 1 {\mu}m to 2.5{\mu}m, overcomes the limitations of traditional color cameras in acquiring scene information. However, conventional SWIR hyperspectral imaging systems face…
We report the development of the frequency-modulation (FM) method for measuring electron spin resonance (ESR) absorption in the 210-420 GHz frequency range. We demonstrate that using a high-frequency ESR spectrometer without resonating…
Hexagonally aligned, free-standing silicon nanowire (SiNW) arrays serve as photonic resonators which, as compared to a silicon (Si) thin film, do not only absorb more visible (VIS) and near-infrared (NIR) light, but also show an inherent…
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the direct band gap at mid-infrared wavelengths. Here, we investigate the effect of strain on the growth of GeSn alloys in a Ge/GeSn core/shell…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
Convolutional Neural Network (CNN) is achieving remarkable progress in various computer vision tasks. In the past few years, the remote sensing community has observed Deep Neural Network (DNN) finally taking off in several challenging…
We suggest to exploit dielectric-metal core-shell nanostructures for efficient resonant and yet broadband absorption of infrared radiation with deeply subwavelength configurations. Realizing that nanostructures would efficiently absorb…
The design and fabrication of a metal-dielectric-metal absorber that achieves strong absorption from the ultraviolet (UV) to the near-infrared (near-IR) spectrum are presented. The proposed nanostructure consists of a periodic titanium (Ti)…
We demonstrate optomechanically-mediated electromagnetically-induced transparency and wavelength conversion in silicon nitride (Si3N4) microdisk resonators. Fabricated devices support whispering gallery optical modes with a quality factor…
GeSn-based avalanche photodiode (APD) operating in shortwave infrared (SWIR) wavelength was demonstrated in this work. A separate absorption and charge multiplication (SACM) structure was employed to take advantage of long wavelength…
While functional materials with both light transmitting and electromagnetic shielding are highly desirable, only very few of them meet the stringent electromagnetic interference (EMI) shielding criteria for optoelectronic systems. Here, a…
Light trapping in planar ultrathin-film solar cells is limited due to a small number of optical modes available in the thin-film slab. A nanostructured thin-film design could surpass this limit by providing broadband increase in the local…