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Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into…

Integration of individual two-dimensional materials into heterostructures is a crucial step which enables development of new and technologically interesting functional systems of reduced dimensionality. Here, well-defined lateral…

Mesoscale and Nanoscale Physics · Physics 2018-06-19 Marin Petrović , Michael Horn-von Hoegen , Frank-J. Meyer zu Heringdorf

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other 2D materials to templating growth of molecular…

Encapsulating few-layer graphene (FLG) in hexagonal boron nitride (hBN) can cause nanoscale inhomogeneities in the FLG, including changes in stacking domains and topographic defects. Due to the diffraction limit, characterizing these…

Hexagonal boron nitride (hBN) flakes are key building blocks for encapsulating two-dimensional (2D) materials, providing atomically flat surfaces and an excellent dielectric environment for high-mobility field-effect transistors and…

Mesoscale and Nanoscale Physics · Physics 2026-02-26 Isaac Soltero , James G. McHugh , Vladimir I. Fal'ko

We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions…

Mesoscale and Nanoscale Physics · Physics 2015-06-05 Hyoungki Park , Amita Wadehra , John W. Wilkins , Antonio H. Castro Neto

Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending graphene above the substrate yields substantial improvement…

Mesoscale and Nanoscale Physics · Physics 2010-10-19 C. R. Dean , A. F. Young , I. Meric , C. Lee , L. Wang , S. Sorgenfrei , K. Watanabe , T. Taniguchi , P. Kim , K. L. Shepard , J. Hone

Defects in wide band gap crystals have emerged as a promising platform for hosting colour centres that enable quantum photonic applications. Among these, hexagonal boron nitride (hBN), a van der Waals material, stands out for its ability to…

Hexagonal Boron Nitride (h-BN) is a highly intriguing candidate for heterostructure optoelectronic applications, such as Deep Ultraviolet photodetectors, UV sensing and communication systems and solar cells. This is primarily due to its…

Applied Physics · Physics 2025-12-11 Meryem Bozkaya , Muhammet Nasuh Arık , Ali Altuntepe , Hakan Ateş , Recep Zan

The electronic properties of moir\'e heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG…

In this paper we theoretically describe the absorption of hexagonal boron nitride (hBN) single layer. We develop the necessary formalism and present an efficient method for solving the Wannier equation for excitons. We give predictions for…

Mesoscale and Nanoscale Physics · Physics 2019-10-18 J. C. G. Henriques , G. B. Ventura , C. D. M. Fernandes , N. M. R. Peres

In this manuscript we study luminescence of hexagonal boron nitride (hBN) by means of non-equilibrium Green's functions plus time-dependent perturbation theory. We derive a formula for light emission in solids in the limit of a weak…

Materials Science · Physics 2019-02-13 E. Cannuccia , B. Monserrat , C. Attaccalite

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor…

This paper reports on the growth and characterization of hexagonal boron nitride (hBN) and its use for solid-state thermal neutron detection. The hBN epilayers were grown by metalorganic chemical vapor deposition on sapphire substrates at a…

Materials Science · Physics 2016-09-12 Kawser Ahmed , Rajendra Dahal , Adam Weltz , James J. -Q. Lu , Yaron Danon , Ishwara B. Bhat

Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy…

Hexagonal boron nitride (hBN) is gaining interest for potential applications in integrated quantum nanophotonics. Yet, to establish hBN as an integrated photonic platform several cornerstones must be established, including the integration…

Applied Physics · Physics 2021-07-29 Chi Li , Johannes E. Fröch , Milad Nonahal , Thinh N. Tran , Milos Toth , Sejeong Kim , Igor Aharonovich

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

Mesoscale and Nanoscale Physics · Physics 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

Two dimensional materials are an emerging class of materials which is transforming the present day research activity on a phenomenal scale. Hexagonal boron nitride is a wide band gap 2D material which is an excellent substrate for graphene…

Materials Science · Physics 2020-02-18 Nilanjan Basu , Alapan Dutta , Ranveer Singh , Tapobrata Som , Jayeeta Lahiri

Hexagonal boron nitride (h-BN) is a critical material for 2D electronic devices for graphene and has attracted a considerable amount of attention owing to its structural similarity and semiconducting property. However, modifying its…

Applied Physics · Physics 2019-11-12 Jerome A. Cuenca , Soumen Mandal , Malcolm Snowball , Adrian Porch , Oliver A. Williams

The structural modifications of polycrystalline hexagonal boron nitride implanted with He+ ion beams at energies between 200 keV and 1.2 MeV to fluences of 1.0 \times 1017 ions \cdot cm-2 were investigated using micro-Raman spectroscopy.…

Materials Science · Physics 2014-01-08 Ronald Machaka , Rudolph M Erasmus , Trevor E Derry
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