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Related papers: YBCO-based non-volatile ReRAM tested in Low Earth …

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Gas and moisture sensing devices leveraging the resistive switching effect in transition metal oxide memristors promise to revolutionize next-generation, nano-scaled, cost-effective, and environmentally sustainable sensor solutions. These…

The interface between the insulators LaAlO$_3$ and SrTiO$_3$ accommodates a two-dimensional electron liquid (2DEL) -- a high mobility electron system exhibiting superconductivity as well as indications of magnetism and correlations. While…

Strongly Correlated Electrons · Physics 2021-06-24 R. J. Green , V. Zabolotnyy , M. Zwiebler , Z. Liao , S. Macke , R. Sutarto , F. He , M. Huijben , G. Rijnders , G. Koster , J. Geck , V. Hinkov , G. A. Sawatzky

With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…

Emerging Technologies · Computer Science 2025-08-13 Luca Fehlings , Thomas Mikolajick , Beatriz Noheda , Erika Covi

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650{\deg}C exhibit the…

Materials Science · Physics 2015-03-20 A. Fête , C. Cancellieri , D. Li , D. Stornaiuolo , A. D. Caviglia , S. Gariglio , J. -M. Triscone

Strongly correlated insulators, such as Mott or charge-transfer insulators, exhibit a strong temperature dependence in their resistivity. Consequently, self-heating effects can lead to electrothermal instabilities in planar thin film…

We performed a computational analysis on percolation transport and filament formation in amorphous $Ge_2Sb_2Te_5$ (a-GST) using 2D finite-element multi-physics simulations with 2 nm out-of-plane depth using an electric-field and temperature…

Applied Physics · Physics 2025-03-14 Md Samzid Bin Hafiz , Helena Silva , Ali Gokirmak

To achieve successful field autonomy, mobile robots need to freely adapt to changes in their environment. Visual navigation systems such as Visual Teach and Repeat (VT&R) often assume the space around the reference trajectory is free, but…

Robotics · Computer Science 2022-07-01 Matías Mattamala , Nived Chebrolu , Maurice Fallon

The development in electronic sector has brought a remarkable change in the life style of mankind. At the same time this technological advancement results adverse effect on environment due to the use of toxic and non degradable materials in…

Materials Science · Physics 2023-06-21 Farhana Yasmin Rahman , Debajyoti Bhattacharjee , Syed Arshad Hussain

A key factor in the economic efficiency of satellites is their availability in orbit. Replacing standardized building blocks, such as empty fuel tanks or outdated electronic modules, could greatly extend the satellites' lifetime. This,…

We have designed and characterized micro-electro-mechanical systems (MEMS) for applications at low temperatures. The mechanical resonators were fabricated using a surface micromachining process. The devices consist of a pair of parallel…

Mesoscale and Nanoscale Physics · Physics 2013-01-24 M. Gonzalez , P. Zheng , E. Garcell , Y. Lee , H. B. Chan

Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of…

The magnetic properties of the cobaltite {\BCAO}, a good realization of the quasi two-dimensional frustrated honeycomb-lattice system with strong planar anisotropy, have been reinvestigated by means of spherical neutron polarimetry with…

Materials Science · Physics 2018-01-23 L. P. Regnault , C. Boullier , J. E. Lorenzo

In the endeavour of developing quantum memories, Er$^{3+}$:CaWO$_4$ has emerged as a promising rare-earth ion-doped (REID) crystal platform due to its long optical coherence times and compatibility with the 1550 nm telecommunications band.…

We report a comprehensive study of the electrical and magneto-transport properties of nanocrystals of La_0.67Ca_0.33MnO_3 (LCMO) (with size down to 15 nm) and La_0.5Sr_0.5CoO_3 (LSCO) (with size down to 35 nm) in the temperature range 0.3 K…

Mesoscale and Nanoscale Physics · Physics 2012-03-20 Tapati Sarkar , M. Venkata Kamalakar , A. K. Raychaudhuri

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…

All-vs-all orbital evolutionary simulations for the low Earth orbit (LEO) simulate the long term evolution of the LEO environment. Although these simulations typically offer the highest fidelity, they are also highly computationally…

Earth and Planetary Astrophysics · Physics 2025-03-12 Enrico M. Zucchelli , Daniel Jang , Richard Linares

Resistive memories (RRAM) are promising candidates for replacing present nonvolatile memories and realizing storage class memories; hence resistance switching devices are of particular interest. These devices are typically memristive, with…

Applied Physics · Physics 2025-02-06 N Vasileiadis , P Loukas , A Mavropoulis , P Normand , I Karafyllidis , G Ch Sirakoulis , P Dimitrakis

Low Earth Orbit (LEO) satellite networks introduce unique congestion control (CC) challenges due to frequent handovers, rapidly changing round-trip times (RTTs), and non-congestive loss. This paper presents the first comprehensive,…

Networking and Internet Architecture · Computer Science 2026-04-17 Mihai Mazilu , Aiden Valentine , George Parisis

We report Raman scattering experiments on the strongly correlated electron system NaxCoO2 with x= 0.71 and ordered Na vacancies. In this doping regime, NaxCoO2 exhibits a large and unusual thermopower and becomes superconducting upon…

Strongly Correlated Electrons · Physics 2022-05-31 P. Lemmens , V. Gnezdilov , G. J. Shu , L. Alff , C. T. Lin , B. Keimer , F. C. Chou

A critical issue affecting filamentary resistive random access memory (RRAM) cells is the requirement of high voltages during electroforming. Reducing the magnitude of these voltages is of significant interest, as it ensures compatibility…