Related papers: Intra- and Inter-Conduction Band Optical Absorptio…
The optical conductivity of the new Dirac semimetal candidate Ir$_2$In$_8$Se is measured in a frequency range from 40 to 30000 cm$^{-1}$ at temperatures from 300 K down to 10 K. The measurement reveals that the compound is a low carrier…
The improvement of light absorption in Si/BeSe$_{0.41}$Te$_{0.59}$ heterostructures for solar cell applications is studied theoretically. First, using simple approaches we found that light absorption could be improved in a single…
Using Linear Response Theory, with appropriate wave functions and energies from perturbation method, the absorption profiles can be calculated for all three classes of mixed-valence systems as defined by Robin and Day : Class III…
The relationship between the luminescence at 1.9 eV and the absorption bands at 2.0 eV and at 4.8 eV were investigated in a wide variety of synthetic silica samples exposed to different gamma- and beta-ray irradiation doses. We found that…
We have expressed the nonlinear optical absorption of a semiconductor in terms of its linear spectrum. We determined that the two-photon absorption coefficient in a strong DC-electric field of a direct gap semiconductor can be expressed as…
We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features…
The temperature dependence of the complex optical properties of the three-dimensional topological insulator Bi2Te2Se is reported for light polarized in the a-b planes at ambient pressure, as well as the effects of pressure at room…
The bowing of the energy of the three lowest band-to-band transitions in $\beta$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$ alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach.…
Beta-phase gallium oxide ($\beta$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs…
Atomically thin films of III-VI post-transition metal chalcogenides (InSe and GaSe) form an interesting class of two-dimensional semiconductor that feature strong variations of their band gap as a function of the number of layers in the…
We present temperature-dependent infrared spectroscopic studies of CaMnSb2, a proposed threedimensional topological material. The low plasma edge in the reflectivity spectrum and small Drude component in the optical conductivity indicate a…
Using first-principles calculations, we report structural and electronic properties of CO, NO$_2$, and NO molecular adsorption on $\beta$-In$_2$Se$_3$ in comparison to a previous study on alpha-phase. Analysis and comparison of adsorption…
Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…
Semiconductor core$-$shell nanowires based on the GaAs substrate are building blocks of many photonic, photovoltaic and electronic devices, thanks to the associated direct band-gap and the highly tunable optoelectronic properties. The…
A theoretical investigation of extremely high field transport in an emerging wide-bandgap material $\beta-Ga_2O_3$ is reported from first principles. The signature high-field effect explored here is impact ionization. Interaction between a…
We study theoretically the strong-field absorption of an ultrafast optical pulse by a gapped graphene monolayer. At low field amplitudes, the absorbance in the pristine graphene is equal to the universal value of $2.3$ percent. Although the…
We show that electron-hole correlation can be used to tune interband and intraband optical transition rates in semiconductor nanostructures with at least one weakly confined direction. The valence-to-conduction band transition rate can be…
Linear and nonlinear optical absorption coefficients of the two-dimensional semiconductor ring in the perpendicular magnetic field $\bf B$ are calculated within independent electron approximation. Characteristic feature of the energy…
We calculate, as a function of temperature and conduction band electron density, the optical absorption of a weakly n-doped, idealized semiconductor quantum well. In particular, we focus on the absorption band due to the formation of a…
We study the optical response of a strongly correlated electron system near the metal-insulator transition using a mapping to the sine-Gordon model. With semiclassical quantization, the spectral weight is distributed between a Drude peak…