Related papers: A computer program to simulate the response of SiP…
A Monte Carlo program is presented which simulates the response of SiPMs in the nonlinear regime, where the number of Geiger discharges from photons and/or from dark counts in the time interval given by the pulse shape of a single Geiger…
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…
This publication focuses on the study of silicon photomultipliers (SiPMs) in view of a reconstruction of the incident photon flux in the regime of highly non-linear response. SiPMs are semiconductor based light detectors compiled of…
The characterisation of radiation-damaged SiPMs is a major challenge, when the average time between dark counts approaches, or even exceeds, the signal decay time. In this note a collection of formulae is presented, which have been…
Monte Carlo simulation code has been developed and tested for studying the passage of charged particle beams and radiation through the crystalline matter at energies from tens of MeV up to hundreds of GeV. The developed Monte Carlo code…
Monte Carlo simulations are powerful tools for understanding the effects of radiation interactions within detector devices allowing not only to evaluate typical estimates for experimental measurements and to serve as means for designing…
Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived.…
In the framework of detector development, Monte Carlo simulations play a key role in the evaluation of the expected performance and the full understanding of the behavior in beam conditions. In particular, a software which simulates the…
Dark count rate and correlated noise rate are among the main parameters that characterize silicon photomultipliers (SiPM). Typically, these parameters are evaluated by applying approximate formulas, or by fitting specific models, to the…
A Python program has been developed which fits a published detector-response model to SiPM charge spectra to characterise SiPMs. Spectra for SiPMs illuminated by low intensity pulsed light with Poisson-distributed number of photons and a…
Triple-GEM detectors are a well known technology in high energy physics. In order to have a complete understanding of their behavior, in parallel with on beam testing, a Monte Carlo code has to be developed to simulate their response to the…
Monte-Carlo simulation of physical processes is an important tool for detector development as it allows to predict signal pulse amplitude and timing, time resolution, efficiency ... Yet despite the fact they are very common, full…
We present a generic framework for the simulation of Silicon Photomultipliers (SiPMs) which enables detailed modelling of the SiPM response using basic SiPM parameters and geometry as an input. Depending on the specified SiPM properties…
This study investigates the characteristics of Silicon Photomultipliers (SiPMs) with different pixel densities, focusing on their response across a wide dynamic range. Using an experimental setup that combines laser source and…
A simple Monte Carlo (MC) algorithm for the simulation of the passage of low-energy gamma rays and electrons through any material medium is presented. The algorithm includes several approximations that accelerate the simulation while…
Particle-in-cell with Monte Carlo collisions (PIC/MCC) is a fully kinetic, particle based numerical simulation method with increasing popularity in the field of low temperature gas discharge physics. Already in its simplest form…
We describe the Monte Carlo (MC) simulation package of the `2K-CAPTURE' setup and discuss the agreement of its output with data. The `2K-CAPTURE' MC simulates the energy loss of particles in detector and components of the passive shield and…
We develop from first principles a model to describe the average response of SiPM devices which takes into account the recovery of pixels during the incoming light pulse. Such effects can significantly affect SiPM response when exposed to a…
We developed an implicit Particle-in-cell/Monte Carlo model in two-dimensional and axisymmetric geometry for the simulations of the radio-frequency discharges, by introducing several numerical schemes which include variable weights,…
Simulation-guided design represents a fundamental contribution towards the development of modern semiconductor devices aiming to reach high-performance particle detection, identification and tracking, and constitutes a strategic element of…