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We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results…
Hybrid lead halide perovskites with 2D stacking structures have recently emerged as promising materials for optoelectronic applications. We report a method for growing 2D nanosheets of hybrid lead halide perovskites (I, Br and Cl), with…
Thin-film periodically poled lithium niobate (TF-PPLN) devices have recently gained prominence for efficient wavelength conversion processes in both classical and quantum applications. However, the patterning and poling of TF-PPLN devices…
Recent studies suggest that piezoelectric polarization can play an important role in determining the electronic and optical properties of nanoscale nitride heterostructures. Among a few models available, recent first-principles calculations…
Organolead trihalide perovskites have drawn substantial interest for applications in photovoltaic and optoelectronic devices due to their low processing cost and remarkable physical properties. However, perovskite thin films still suffer…
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the…
Halide perovskite materials raised tremendous interest in recent years since their cheap fabrication, superior performance in both solar cell and light emitting diode (LED). Due to the existence of layered quantum well structure, quasi…
Recently, we studied the effect of hexagonal sinusoidal textures on the reflective properties of perovskite-silicon tandem solar cells using the finite element method (FEM). We saw that such nanotextures, applied to the perovskite top cell,…
Epsilon-near-zero (ENZ) materials have shown significant potential for nonlinear optical applications due to their ultrafast hot carriers and consequent optical nonlinearity enhancement. Modified poly(3,4-ethylenedioxythiophene) (PEDOT)…
The commercialization prospects of perovskite light emitting diodes depend on its luminescence efficiency under large carrier densities. The decrease in luminescence efficiency under such high injection conditions could lead to an undesired…
Low dimensional perovskites are considered good candidates for light emitting applications given the high exciton binding energy which should in principle improve the radiative recombination efficiency. Yet, single-layered two-dimensional…
Halide perovskites have indisputably exceptional optical and electronic properties, which are attractive for next-generation optoelectronic device technologies. We report on a reversible photoluminescence (PL) peak in iodide-based…
Modern opto-electronic devices are based on semiconductor heterostructures employing the process of electron-hole pair annihilation. In particular polar materials enable a variety of classic and even quantum light sources, whose on-going…
Size- and shape- dependent unique properties of the metal halide perovskite nanocrystals make them promising building blocks for constructing various electronic and optoelectronic devices. These unique properties together with their easy…
We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active…
We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown…
Quasi-2D metal halide perovskites have emerged as a promising material for photodetection due to excellent optoelectronic properties, simple synthesis, and robust stability. Albeit, developing high-performance photodetectors based on…
Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental…
Lead poisoning and notorious ambient instability in lead-based halide perovskites pave the way for the exploration of alternative materials for affordable and efficient solar cell fabrication. An important prerequisite to this end is the…
High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects and silicon photonics. However, conventional light sources based on compound…