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We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…
Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of…
Two-dimensional superconductors have been realized in various atomically thin films such as the twisted bilayer graphene, some of which are anticipated to involve unconventional pairing mechanism. Due to their low dimensionality,…
Organic semiconductors are usually not thought to show outstanding performance in highly-integrated, sub 100 nm transistors. Consequently, single-crystalline materials such as SWCNTs, MoS2 or inorganic semiconductors are the material of…
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features a semi-suspended channel above a…
Scaling up quantum computing hardware is hindered by the narrow operating margins of current quantum components. Here, we introduce a composite qubit and gate scheme that achieves wide margins by use of transistor-like nonlinearities to…
To date, endeavors in nanoscale spintronics are dominated by the use of single-electron or single-spin transistors having at their heart a semiconductor, metallic or molecular quantum dot who's localized states are non-spin-degenerate and…
We investigate the thermoelectric performance of 2D nanojunctions with gate tunable architectures and varying channel lengths from 3 to 12 nm using a combination of first principles simulations, including density functional theory, DFT with…
We study spin-dependent transport through a quantum nanostructure composed of a quantum dot (QD) surrounded by a quantum nanoring. The nanostructure is side-attached to source and drain electrodes and we assume that the confining potential…
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting…
In this paper, we develop an explicit model to predict the DC electrical behavior in ultra-thin surrounding gate junctionless nanowire FET. The proposed model takes into account 2D electrical and geometrical confinements of carrier charge…
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full…
Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and enhanced performance in advanced semiconductor nodes.…
We recently presented the first superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions [1: J. P. Cleuziou, W. Wernsdorfer, V. Bouchiat, T. Ondarcuhu and M. Monthioux, Nature…
The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced…
Superconducting circuits are an extremely versatile platform to realize quantum information hardware and to emulate topological materials. We here show how a simple arrangement of capacitors and conventional…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
Today, almost all information processing is performed using electronic logic circuits operating with up to several gigahertz frequency. All-optical logic, however, that holds the promise to allow up to three orders of magnitude higher speed…
We develop a theory of tunneling spectroscopy in superconducting topological insulator (STI), i.e. superconducting state of a carrier-doped topological insulator. Based on the quasi-classical approximation, we obtain an analytical…
As per de Gennes predictions, a superconducting layer placed between two ferromagnetic insulators can drive an antiferromagnetic exchange coupling between them. Using two ferromagneticinsulating GdN layers having dissimilar switching fields…