Related papers: Spin gapless semiconductors
Topological semimetals, known for their intriguing properties arising from band degeneracies, have garnered significant attention. However, the discovery of a material realization and the detailed characterization of spinless Dirac…
In this paper, we report the theoretical investigation and experimental realization of a new spin-gapless semiconductor (SGSs) compound CoFeMnSn belonging to the family of quaternary Heusler alloys. Through the use of several ground-state…
The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor…
It is shown by rigorous ab initio calculations that half-Heusler alloys of transition metals and $d^0$ metals, defined by the valence electronic configuration $ns^{1,2},(n-1)d^0$, can produce all kinds of half-metallic behavior including…
The collective electronic properties of various types of pseudospin-$1$ Dirac-cone materials with a flat band and finite bangaps in their energy spectra are the subject of our reported investigation. Specifically, we have calculated the…
The central target of spintronics research is to achieve flexible control of highly efficient and spin-polarized electronic currents. Based on first-principles calculations and k-p models, we demonstrate that Cu2S/MnSe heterostructures are…
Topological insulators are a new class of insulators in which a bulk gap for electronic excitations is generated by strong spin orbit coupling. These novel materials are distinguished from ordinary insulators by the presence of gapless…
Half-metals have been envisioned as active components in spintronic devices by virtue of their completely spin-polarized electrical currents. Actual materials hosting half-metallic phases, however, remain scarce. Here, we predict that…
Electrical control of spin polarization is very desirable in spintronics, since electric field can be easily applied locally in contrast with magnetic field. Here, we propose a new concept of bipolar magnetic semiconductor (BMS) in which…
The ideal diode is a theoretical concept that completely conducts the electric current under forward bias without any loss and that behaves like a perfect insulator under reverse bias. However, real diodes have a junction barrier that…
We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f…
Electron systems that possess light-like dispersion relations or the conical Dirac spectrum, such as graphene and bismuth, have recently been shown to harbor unusual collective states in high magnetic fields. Such states are possible…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Spintronic devices typically employ heterostructures with ferromagnets which break time-reversal symmetry and have non-vanishing magnetization. With the growing class of materials that support spin-polarized carriers, current, and…
The prospect of a Dirac half metal, a material which is characterized by a bandstructure with a gap in one spin channel but a Dirac cone in the other, is of both fundamental interest and a natural candidate for use in spin-polarized current…
Three dimensional (3D) topological insulators are novel states of quantum matter that feature spin-momentum locked helical Dirac fermions on their surfaces and hold promise to open new vistas in spintronics, quantum computing and…
Silicene is a one-atom-thick 2D crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene,…
An idea is proposed for realizing a fully spin-polarized Dirac semimetal in frustrated itinerant magnets. We show that itinerant electrons on a triangular lattice exhibit the Dirac cone dispersion with half-metallic behavior in the presence…
Using the k.p theory and first-principles simulations, we report that applying a moderate pressure (> 0.6 GPa) on black phosphorus can diminish its band gap and produce one-dimensional and even two-dimensional (2D) Dirac cones,…
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have…