Related papers: All-Linear Multistate Magnetic Switching Induced b…
Electric field control of the exchange bias effect across ferromagnet/antiferromagnet (FM/AF) interfaces has offered exciting potentials for low-energy-dissipation spintronics. In particular, the solid state magneto-ionic means is highly…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
We derive the equations of motion of a Domain Wall in a thin-film magnet coupled to the surface states of a Topological Insulator in the presence of of both an electric field along the Domain Wall and a magnetic field perpendicular to the…
We investigate theoretically the motion of chiral N\'eel domain walls in perpendicularly magnetized systems driven by in-plane strain gradients. We show that such strain drives domain walls efficiently towards increasing tensile…
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a…
Spin-polarized electric current exerts torque on local magnetic spins, resulting in magnetic domain-wall (DW) motion in ferromagnetic nanowires. Such current-driven DW motion opens great opportunities toward next-generation magnetic devices…
Topological magnons, quantized spin waves featuring nontrivial boundary modes, present a promising route toward lossless information processing. Realizing practical devices typically requires magnons excited in a controlled manner to enable…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
Recent experimental studies of magnetic domain expansion under easy-axis drive fields in materials with a perpendicular magnetic anisotropy have shown that the domain wall velocity is asymmetric as a function of an external in plane…
One of the fundamental effects of the laser-matter interaction is the appearance of an induced transient magnetisation. While the underlying phenomena differ in their microscopic origin and cover a diverse array of materials, here we…
We demonstrate movement of a head-to-head domain wall through a magnetic nanowire simply by passing an electrical current through the domain wall and without any external magnetic field applied. The effect depends on the sense and magnitude…
We study current-driven domain-wall (DW) dynamics in antiferromagnets (AFMs) with Dzyaloshinskii-Moriya interaction (DMI). We obtain an exact analytical solution for spiral DW dynamics, applicable to both head-to-head DWs under bulk DMI and…
The relation between domain wall motion and intensity of driven current is examined in a phenomenological theory where the kinetic energy is expanded as a series of polynomial function of current density just as the Landau phase transition…
We study the magnetic properties of perpendicularly magnetised Pt/Co/Ir thin films and investigate the domain wall creep method of determining the interfacial Dzyaloshinskii-Moriya (DM) interaction in ultra-thin films. Measurements of the…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…
In elastically coupled multiferroic heterostructures that exhibit full domain correlations between ferroelectric and ferromagnetic sub-systems, magnetic domain walls are firmly pinned on top of ferroelectric domain boundaries. In this work…
We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an…
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of…
Magnetic domain walls are objects whose dynamics is inseparably connected to their structure. In this work we investigate magnetic bilayers, which are engineered such that a coupled pair of domain walls, one in each layer, is stabilized by…
We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected…