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Direct observation of temperature dependence of individual bands of semiconductors for a wide temperature region is not straightforward, in particular. However, this fundamental property is a prerequisite in understanding the…

Materials Science · Physics 2020-01-08 E. Cannuccia , A. Gali

Temperature-dependent thermal conductivity of epitaxial silicon nano-crystalline (SiNC) structures composed of nanometer-sized grains separated by ultra-thin silicon-oxide (SiO2) films is measured by the time domain thermoreflectance…

Mesoscale and Nanoscale Physics · Physics 2018-02-14 Takafumi Oyake , Lei Feng , Takuma Shiga , Masayuki Isogawa , Yoshiaki Nakamura , Junichiro Shiomi

The structural, electronic and optical properties of Si nanocrystals of different size and shape, passivated with hydrogens, OH groups, or embedded in a SiO2 matrix are studied. The comparison between the embedded and free, suspended…

Materials Science · Physics 2010-09-01 Roberto Guerra , Elena Degoli , Stefano Ossicini

The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality…

Materials Science · Physics 2009-11-10 Rodrigo B. Capaz , Catalin D. Spataru , Paul Tangney , Marvin L. Cohen , Steven G. Louie

Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have…

Mesoscale and Nanoscale Physics · Physics 2023-04-12 Xiao Zhang , Emmanouil Kioupakis

Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by…

From ultraviolet to mid-infrared region, light-matter interaction mechanisms in semiconductors progressively shift from electronic transitions to phononic resonances and are affected by temperature. Here, we present a parallel…

Optics · Physics 2023-06-01 Zherui Han , Changkyun Lee , Jiawei Song , Haiyan Wang , Peter Bermel , Xiulin Ruan

SiC is a robust semiconductor material considered ideal for high-power application due to its material stability and large bulk thermal conductivity defined by the very fast phonons. In this paper, however, we show that both…

Materials Science · Physics 2007-05-23 Eleni Ziambaras , Per Hyldgaard

The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…

Materials Science · Physics 2009-11-11 Niladri Sarkar , Subhasis Ghosh

Recently, Zacharias et al [Phys. Rev. Lett. 115, 177401 (2015)] developed a new ab initio theory of temperature-dependent optical absorption spectra and band gaps in semiconductors and insulators. In that work the zero-point renormalization…

Materials Science · Physics 2016-08-17 Marios Zacharias , Feliciano Giustino

Silicon nanocrystals (Si NCs) have shown great promise for electroluminescent and photoluminescent applications. In order to optimize the properties of Si NC devices, however, electronic transport in Si NCs films needs to be thoroughly…

Mesoscale and Nanoscale Physics · Physics 2014-09-02 Ting Chen , Brian Skinner , Wei Xie , B. I. Shklovskii , Uwe R. Kortshagen

We develop a first-principles theory of phonon-assisted optical absorption in semiconductors and insulators which incorporates the temperature dependence of the electronic structure. We show that the Hall-Bardeen-Blatt theory of indirect…

Materials Science · Physics 2015-10-22 Marios Zacharias , Christopher E. Patrick , Feliciano Giustino

By means of ab-initio calculations we investigate the optical properties of pure a-SiN$_x$ samples, with $x \in [0.4, 1.8]$, and samples embedding silicon nanoclusters (NCs) of diameter $0.5 \leq d \leq 1.0$ nm. In the pure samples the…

Mesoscale and Nanoscale Physics · Physics 2012-05-03 R. Guerra , M. Ippolito , S. Meloni , S. Ossicini

The effect of the presence of electron-phonon (e-ph) coupling in the SiC, GeC and SnC hybrids is studied in the framework of the ab initio perturbation theory. The electronic bang gap thermal dependence reveals a normal monotonic decrease…

Materials Science · Physics 2019-02-13 L. B. Drissi , N. B-J. Kanga , S. Lounis , F. Djeffal , S. Haddad

Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…

Silicon photonics promises to alleviate the bandwidth bottleneck of modern day computing systems. But silicon photonic devices have the fundamental problem of being highly sensitive to ambient temperature fluctuations due to the high…

Optics · Physics 2015-05-14 Biswajeet Guha , Bernardo B. C. Kyotoku , Michal Lipson

Silicon photoluminescence and lasing have been critical issues to breakthrough bottlenecks in the understanding of luminescence mechanisms. Unfortunately, long-standing disputes about the exciton recombination mechanism and fluorescence…

Mesoscale and Nanoscale Physics · Physics 2022-11-01 Feilong Wang , Qiongrong Ou , Shuyu Zhang

The present paper deals with the results of a research work on the optical properties of colloidal InP/ZnS nanocrystals stabilized with a heterobifunctional polyvinylpyrrolidone polymer. We have analyzed the absorption and photoluminescence…

Materials Science · Physics 2023-01-31 S. S. Savchenko , A. S. Vokhmintsev , M. S. Karabanalov , A. M. A. Henaish , I. A. Weinstein

Silicon nanowires (SiNWs) attached to a wafer substrate are converted to inversely tapered silicon nanocones (SiNCs). After excitation with visible light, individual SiNCs show a 200-fold enhanced integral band-to-band luminescence as…

Optics · Physics 2015-11-30 Sebastian W. Schmitt , George Sarau , Silke H. Christiansen

We studied the reflectivity spectra of amorphous silicon dioxide detected under vacuum UV synchrotron radiation as a function of temperature between 10 and 300 K. Kramers-Kronig dispersion analysis of reflectivity spectra allowed us to…

Disordered Systems and Neural Networks · Physics 2010-09-21 E. Vella , F. Messina , M. Cannas , R. Boscaino
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